High-temperature properties of Schottky diodes made of silicon carbide

2016 ◽  
Author(s):  
Krzysztof Gorecki ◽  
Damian Bisewski ◽  
Janusz Zarebski ◽  
Ryszard Kisiel ◽  
Marcin Mysliwiec
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Schottky Diodes ◽  
High Temperature Properties

Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Efficiency ◽  
Schottky Diodes ◽  
Power Converter ◽  
Electronic Systems ◽  
High Temperature Electronics ◽  
New Material ◽  
Silicon Power Devices ◽  
Relationship Of

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

Device processing and characterisation of high temperature silicon carbide Schottky diodes

2006 ◽  
Vol 83 (1) ◽  
pp. 150-154 ◽  
Author(s):  
K.V. Vassilevski ◽  
I.P. Nikitina ◽  
N.G. Wright ◽  
A.B. Horsfall ◽  
A.G. O’Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Schottky Diodes ◽  
Device Processing

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

2006 ◽  
pp. 931-934
Author(s):  
Konstantin V. Vassilevski ◽  
I. Nikitina ◽  
Praneet Bhatnagar ◽  
A.B. Horsfall ◽  
Nicolas G. Wright ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Schottky Diodes ◽  
Avalanche Breakdown ◽  
High Temperature Operation

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 987-990 ◽  
Author(s):  
Praneet Bhatnagar ◽  
Nicolas G. Wright ◽  
Alton B. Horsfall ◽  
C. Mark Johnson ◽  
Michael J. Uren ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ambient Temperature ◽  
Power Amplifier ◽  
Schottky Diode ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Voltage Gain ◽  
Power Devices

Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C. A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20 % reduction is consistent with the fall in transconductance of the device.

DURALCAN F3S.xxS

Alloy Digest ◽  
1994 ◽  
Vol 43 (10) ◽  
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Compressive Strength ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Base Alloy ◽  
Alloy Matrix ◽  
Reinforced Composite ◽  
Temperature Performance ◽  
Aluminum Alloy Matrix

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.

CENTRALLOY G4879 MICRO

Alloy Digest ◽  
2013 ◽  
Vol 62 (5) ◽  
Keyword(s):  
High Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Nickel Alloy ◽  
High Temperature Properties ◽  
Uniform Dispersion ◽  
Dislocation Movement

Abstract Centralloy G4879 Micro is a cast nickel alloy with very good high-temperature properties. The alloy has carbides in a uniform dispersion that impede dislocation movement. This datasheet provides information on composition, physical properties, elasticity, and tensile properties. It also includes information on casting, machining, and joining. Filing Code: Ni-708. Producer or source: Schmidt & Clemens Inc..

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