The optimal excitation voltage for spherical slotted antenna coated by two layers of dielectric material and plasma

Author(s):  
O. Sh. Dautov ◽  
M. S. Al-abadi
Author(s):  
Osman Shakirovich Dautov ◽  
Mohammad Sadon AL-Abadi ◽  
Haidar N. Al-Anbagi

The operation of the new proposed spherical slotted antenna covered by layers of dielectric material and plasma was analyzed numerically in this paper. By utilizing the Integra-functional equations method, the optimum thickness of dielectric material layer and suitable conditions which improve the operation of this antenna are analyzed here by MATHCAD. The thickness of dielectric layer must not be less or more than λ/6. Furthermore, the authors propose manipulating the operation frequency to enable such antenna to work in most circumstances.


2010 ◽  
Vol 670 ◽  
pp. 360-368 ◽  
Author(s):  
Takeo Ishikawa ◽  
Kouki Yonetake ◽  
Nobuyuki Kurita ◽  
Masahisa Tsuchiya

This paper proposes a method to estimate the magnetization distribution in permanent magnet of a Brushless DC motor when the excitation voltage of a magnetizer is changed. First, we show from the experimental results that there is an optimal excitation voltage to reduce the cogging torque of the motor. Next, we show that it is possible to estimate the magnetization distribution in the permanent magnet by using the measured flux density distribution and cogging torque.


2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.


2019 ◽  
Author(s):  
Chem Int

Model was developed for the prediction of polarization characteristics in a dielectric material exhibiting piezoelectricity and electrostriction based on mathematical equations and MATLAB computer simulation software. The model was developed based on equations of polarization and piezoelectric constitutive law and the functional coefficient of Lead Zirconate Titanate (PZT) crystal material used was 2.3×10-6 m (thickness), the model further allows the input of basic material and calculation of parameters of applied voltage levels, applied stress, pressure, dielectric material properties and so on, to generate the polarization curve, strain curve and the expected deformation change in the material length charts. The mathematical model revealed that an application of 5 volts across the terminals of a 2.3×10-6 m thick dielectric material (PZT) predicted a 1.95×10-9 m change in length of the material, which indicates piezoelectric properties. Both polarization and electric field curve as well as strain and voltage curve were also generated and the result revealed a linear proportionality of the compared parameters, indicating a resultant increase in the electric field yields higher polarization of the dielectric materials atmosphere.


1999 ◽  
Vol 522 (2) ◽  
pp. 1079-1087 ◽  
Author(s):  
Brian F. Farrell ◽  
Petros J. Ioannou

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