Electrical characteristic of InGaAs multiple-gate MOSFET devices

2015 ◽  
Author(s):  
Cheng-Hao Huang ◽  
Yiming Li
Keyword(s):  
Electrical Characteristic

Combine Nanoprobing Technique with Difference Analysis to Identify Nonvisual Failures

2006 ◽  
Author(s):  
Cha-Ming Shen ◽  
Tsan-Cheng Chuang ◽  
Jie-Fei Chang ◽  
Jin-Hong Chou
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Electrical Characteristic ◽  
The Novel ◽  
Difference Analysis ◽  
Original Idea ◽  
Deductive Method ◽  
Complete Measurement

Abstract This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experiment. The objective is to overcome the difficulty in detecting non-visual, erratic, and complex failure modes. And the original idea of this deductive method is based on the complete measurement of electrical characteristic by nano-probing and difference analysis. The capability to distinguish erratic and invisible defect was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

STUDY OF ELECTRICAL CHARACTERISTIC FOR 50NM AND 10NM SOI BODY THICKNESS IN MOSFET DEVICE

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
M.N.I.A Aziz ◽  
F. Salehuddin ◽  
A.S.M. Zain ◽  
K.E. Kaharudin
Keyword(s):  
Thin Film ◽  
Electrical Characteristic ◽  
Silicon On Insulator ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Doping Density ◽  
Soi Mosfet ◽  
Buried Oxide ◽  
Soi Technology ◽  
Better Than

Silicon-on-insulator (SOI) technology is an effective approach of mitigating the short channel effect (SCE) problems. The SOI is believed to be capable of suppressing the SCE, thereby improving the overall electrical characteristics of MOSFET device. SCE in SOI MOSFET is heavily influenced by thin film thickness, thin-film doping density and buried oxide (BOX) thickness. This paper will analyze the effect of BOX towards SOI MOSFET device. The 50nm and 10nm thickness of buried oxide in SOI MOSFET was developed by using SILVACO TCAD tools, specifically known as Athena and Atlas modules. From the observation, the electrical characteristic of 100nm thickness is slightly better than 50nm and 10nm. It is observed that the value drive current of 10nm and 100nm thickness SOI MOSFET was 6.9% and 11% lower than 50nm respectively, but the overall 50nm is superior. However, the electrical characteristics of 10nm SOI MOSFET are still closer and within the range of ITRS 2013 prediction.

Electrical Characteristic Fluctuations in Sub-45nm CMOS Devices

2006 ◽  
Author(s):  
Fu-liang Yang ◽  
Jiunn-ren Hwang ◽  
Yiming Li
Keyword(s):  
Electrical Characteristic

Electrical Characteristic of Polymer-Insulated Rail Brackets of the Light Rail Transit Subjected to Lightning Induced Overvoltage

2021 ◽  
Author(s):  
Farah Asyikin Abd Rahman ◽  
Mohd Zainal Abidin Ab Kadir ◽  
Ungku Anisa Ungku Amirulddin ◽  
Miszaina Osman
Keyword(s):  
Electrical Characteristic ◽  
Light Rail ◽  
Rail Transit ◽  
Light Rail Transit

Impact of Strain on Electrical Characteristic of Double-Gate TFETs with a SiO2/RfO2Stacked Gate-Oxide Structure

2017 ◽  
Author(s):  
Prince Kumar Singh ◽  
Sanjay Kumar ◽  
Sweta Chander ◽  
Kamalaksha Baral ◽  
S. Jit
Keyword(s):  
Electrical Characteristic ◽  
Gate Oxide ◽  
Double Gate ◽  
Oxide Structure
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