Superior subthreshold slope of gate-all-around (GAA) p-type poly-Si junctionless nanowire transistors with highly suppressed grain boundary defects

Author(s):  
Min-Ju Ahn ◽  
Takuya Saraya ◽  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.


2006 ◽  
Vol 420 (4-6) ◽  
pp. 448-452 ◽  
Author(s):  
C.Y. Zhang ◽  
X.M. Li ◽  
X.D. Gao ◽  
J.L. Zhao ◽  
K.S. Wan ◽  
...  

2004 ◽  
Vol 51 (2) ◽  
pp. 212-219 ◽  
Author(s):  
P.M. Walker ◽  
H. Mizuta ◽  
S. Uno ◽  
Y. Furuta ◽  
D.G. Hasko

1981 ◽  
Vol 5 ◽  
Author(s):  
C.B. Carter

ABSTRACTDislocations in low-angle tilt boundaries exhibit a wide variety of Burgers vector including a/2<112> a<001> and a<111>. The dislocations are usually dissociated: Shohkley, stair-rod and Frank partial dislocations may each be formed together with associated intrinsic and extrinsic stackingfaults. Dislocations in low-angle {111} twist boundaries are usually assumed to dissociated by a glide mechanism to give two types of extended nodes, known as P–type and K–type, which contain intrinsic and extrinsic stacking-faults respectively. It is shown that dissociation by climb actually occurs for both types of grain boundary.


1987 ◽  
Vol 106 ◽  
Author(s):  
K. Masri ◽  
J. P. Boyeaux ◽  
S. N. Kumar ◽  
L. Mayet ◽  
A. Laugier

ABSTRACTA high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.


Author(s):  
Seungwon Yang ◽  
Younghwan Son ◽  
Sung Dae Suk ◽  
Dong-Won Kim ◽  
Donggun Park ◽  
...  

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