Two-dimensional numerical modeling of magnetic-field sensors in CMOS technology

1985 ◽  
Vol 32 (7) ◽  
pp. 1212-1219 ◽  
Author(s):  
A. Nathan ◽  
A.M.J. Huiser ◽  
H.P. Baltes
Keyword(s):  
Magnetic Field ◽  
Numerical Modeling ◽  
Cmos Technology ◽  
Two Dimensional ◽  
Magnetic Field Sensors

Data Acquisition and Processing of Weak Low-Frequency Magnetic Signals

2011 ◽  
Vol 65 ◽  
pp. 299-302 ◽  
Author(s):  
Shou Qiang Men ◽  
Christian Resagk
Keyword(s):  
Magnetic Field ◽  
Data Acquisition ◽  
Fourier Transforms ◽  
Low Frequency ◽  
Fast Fourier Transforms ◽  
Two Dimensional ◽  
Calibration System ◽  
Magnetic Field Sensors ◽  
Data Acquisition And Processing

A simple calibration system for magnetic field sensors was designed, and experiments were carried out to calibrate two-dimensional fluxgate sensors and a sensor ring composed of eight fluxgate sensors. Fast Fourier Transforms and trapezoidal numerical integrals were applied to deal with the raw signals. It is found that it is not suitable to apply fast Fourier Transforms only to deal with signals with several peaks close to each other, but trapezoidal numerical integrals should also be used in combination with the FFT method.

Large voltage modulation in magnetic field sensors from two-dimensional arrays of Y-Ba-Cu-O nano Josephson junctions

2014 ◽  
Vol 104 (6) ◽  
pp. 062601 ◽  
Author(s):  
Shane A. Cybart ◽  
E. Y. Cho ◽  
T. J. Wong ◽  
V. N. Glyantsev ◽  
J. U. Huh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Josephson Junctions ◽  
Two Dimensional ◽  
Magnetic Field Sensors

Two‐dimensional electron gas magnetic field sensors

1990 ◽  
Vol 57 (3) ◽  
pp. 291-293 ◽  
Author(s):  
J. Heremans ◽  
D. L. Partin ◽  
D. T. Morelli ◽  
B. K. Fuller ◽  
C. M. Thrush
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Magnetic Field Sensors ◽  
Dimensional Electron Gas

Fabrication and Characteristics of the 2D Magnetic Sensor Based on the MOSFET Hall Device

2014 ◽  
Vol 609-610 ◽  
pp. 1066-1071 ◽  
Author(s):  
Xiao Feng Zhao ◽  
Jing Ya Cao ◽  
Yu Song ◽  
Dian Zhong Wen ◽  
Qian Ru Lin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Silicon Substrate ◽  
Cmos Technology ◽  
Magnetic Sensor ◽  
Two Dimensional ◽  
Packaging Technology

This paper reports the two dimensional (2D) magnetic sensor, which is comprised of twoMOSFET Hall devices with similar characteristics. The sensor is based on the MOSFET Hall deviceprinciple and is fabricated on <100> orientation silicon substrate by adopting complementary metaloxide semiconductor (CMOS) technology and packaging technology. The experiment results indicatethat when VDS =5.0 V, the magnetic sensitivities of the 2D magnetic sensor can reach Sx=34.0 mV/Tand Sy=33.6 mV/T in the x and y directions, respectively, it is necessary to realize the measurementof 2D magnetic field.

scholarly journals Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 393 ◽  
Author(s):  
Yen-Nan Lin ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Magnetic Field Sensors ◽  
Sensor Sensitivity ◽  
Sensor Fabrication ◽  
The Magnetic Field ◽  
Hall Elements

Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF.

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