Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

1987 ◽  
Vol 34 (8) ◽  
pp. 1650-1657 ◽  
Author(s):  
J. Baek ◽  
M.S. Shur ◽  
R.R. Daniels ◽  
D.K. Arch ◽  
J.K. Abrokwah ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Voltage ◽  
Capacitance Voltage

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

2016 ◽  
Vol 50 (12) ◽  
pp. 1574-1578 ◽  
Author(s):  
E. A. Tarasova ◽  
E. S. Obolenskaya ◽  
A. V. Hananova ◽  
S. V. Obolensky ◽  
V. E. Zemliakov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Experimental Studies ◽  
Current Voltage ◽  
Capacitance Voltage

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

A compact current-voltage model for carbon nanotube field effect transistors

2008 ◽  
Author(s):  
Hadi Hosseinzadegan ◽  
Hossein Aghababa ◽  
Mahmoud Zangeneh ◽  
Ali Afzali-kusha ◽  
Behjat Forouzandeh
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Current Voltage

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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