High-Frequency Electrical Model of Through-Silicon Vias for 3-D Integrated Circuits Considering Eddy Current and Proximity Effects

Author(s):  
Qijun Lu ◽  
Zhangming Zhu ◽  
Yintang Yang ◽  
Ruixue Ding ◽  
Yuejin Li
2012 ◽  
Vol 2012 (1) ◽  
pp. 000239-000243
Author(s):  
Srinidhi Raghavan Narasimhan ◽  
A. Ege Engin

The 3D IC integration technology and silicon interposers rely on through silicon vias (TSVs) for vertical interconnections. Hence, the medium carrying high frequency signals is lossy silicon (Si). Fundamental understanding of wave propagation through TSVs is essential for successful implementation of 3D IC integration technology as well as for the development of Si interposers at RF/microwave frequencies. The focus of this paper is characterization and modelling of TSVs and Si to explore high speed signal propagation through the lossy Si medium. To understand better the physical significance of the TSV, we will establish a framework for wave propagation through TSVs based on dielectric quasi-TEM, skin effect, and slow-wave modes similar to MIS micro-strip lines. For validation of the existence of these modes, full wave simulation results will be compared with simpler two dimensional transmission line simulators.


ETRI Journal ◽  
2014 ◽  
Vol 36 (6) ◽  
pp. 931-941 ◽  
Author(s):  
Kyungin Cho ◽  
Cheoljon Jang ◽  
Jong-wha Chong

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