Variation Tolerance in a Multichannel Carbon-Nanotube Transistor for High-Speed Digital Circuits

2009 ◽  
Vol 56 (3) ◽  
pp. 383-392 ◽  
Author(s):  
Arijit Raychowdhury ◽  
Vivek K. De ◽  
Juanita Kurtin ◽  
Shekhar Y. Borkar ◽  
Kaushik Roy ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
High Speed ◽  
Digital Circuits ◽  
Variation Tolerance

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

GaAs for high-speed digital circuits

1982 ◽  
Vol 13 (1) ◽  
pp. 29-33 ◽  
Author(s):  
A.W. Livingstone
Keyword(s):  
High Speed ◽  
Digital Circuits

scholarly journals Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

ACS Nano ◽  
2010 ◽  
Vol 4 (8) ◽  
pp. 4388-4395 ◽  
Author(s):  
Mingjing Ha ◽  
Yu Xia ◽  
Alexander A. Green ◽  
Wei Zhang ◽  
Mike J. Renn ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Digital Circuits

scholarly journals 14 Transistors CNTFET and CMOS Full Adder Cell for Modified GDI Technique

2019 ◽  
Vol 8 (12) ◽  
pp. 842-845
Keyword(s):  
Carbon Nanotube ◽  
High Speed ◽  
Full Adder ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Basic Unit ◽  
Short Channel ◽  
Low Power Dissipation ◽  
The Difference ◽  
Cmos Implementation

Adder Is Basic Unit For Any Digital System, Dsp And Microprocessor. The Main Issue In Design High Speed Full Adder Cell With The Low Power Dissipation. As We Know Cmos Technology Used For Vlsi Designing Cmos Has Many Drawbacks As High Power Short Channel Effect Etc. Then Cntfet (Carbon Nanotube Field Effect Transistor) Has Been Developed Which Has Same Structure As Cmos. The Difference Between Structure Of Cmos And Cntfet Is Their Channel. In Cntfet Channel Is Replaced By Carbon Nanotube. In This Paper We Compare Full Adder Circuit Using Cntfet With Gdi Technique And Cmos Implementation Of Adder Which Gdi Technique. Gdi Technique Is Used For Speed And Power Optimization In Digital Circuit. This Can Also Reduce The Count Of Transistor Which Affects The Size Of Device.

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