2-output Spin Wave Programmable Logic Gate

This paper presents a 2-output Spin-Wave Programmable Logic Gate structure able to simultaneously evaluate any pair of AND, NAND, OR, NOR, XOR, and XNOR Boolean functions. Our proposal provides the means for fanout achievement within the Spin Wave computation domain and energy and area savings as two different functions can be simultaneously evaluated on the same input data. We validate our proposal by means of Object Oriented Micromagnetic Framework (OOMMF) simulations and demonstrate that by phase and magnetization threshold output sensing \{AND, OR, NAND, NOR\} and \{XOR and XNOR\} functionalities can be achieved, respectively. To get inside into the potential practical implications of our approach we use the proposed gate to implement a 3-input Majority gate, which we evaluate and compare with state of the art equivalent implementations in terms of area, delay, and energy consumptions. Our estimations indicate that the proposed gate provides 33% and 16% energy and area reduction, respectively, when compared with spin-wave counterpart and 42% energy reduction while consuming 12x less area when compared to a 15 nm CMOS implementation.

2-output Spin Wave Programmable Logic Gate

This paper presents a 2-output Spin-Wave Programmable Logic Gate structure able to simultaneously evaluate any pair of AND, NAND, OR, NOR, XOR, and XNOR Boolean functions. Our proposal provides the means for fanout achievement within the Spin Wave computation domain and energy and area savings as two different functions can be simultaneously evaluated on the same input data. We validate our proposal by means of Object Oriented Micromagnetic Framework (OOMMF) simulations and demonstrate that by phase and magnetization threshold output sensing \{AND, OR, NAND, NOR\} and \{XOR and XNOR\} functionalities can be achieved, respectively. To get inside into the potential practical implications of our approach we use the proposed gate to implement a 3-input Majority gate, which we evaluate and compare with state of the art equivalent implementations in terms of area, delay, and energy consumptions. Our estimations indicate that the proposed gate provides 33% and 16% energy and area reduction, respectively, when compared with spin-wave counterpart and 42% energy reduction while consuming 12x less area when compared to a 15 nm CMOS implementation.

CMOS Implementation of 5T SRAM with Low Power Dissipation

SRAM is a very fast memory with low power consumption. The main objective of this work is to perform a 64-digit SRAM with 90 nm innovation. Execution depended on a granular perspective. SRAM's base module is similar to an N-MOS inverter, flip-flop, and semiconductor. We design this module according to the configuration rule of the ? format. Using Harvard technology, SRAM can easily retrieve information from memory. To create advanced rational circuits, it is important to see how an SRAM is assembled and how it works. The bottom line is that with 0.12 micron 90nm technology, we are developing a 5T SRAM and we can read and write. It is a fundamental part of a computer's central processing unit. RAM is a building block made up of several circuits. The 64-bit SRAM reader was developed with MICROWIND and DSCH2. With the MICROWIND program, the developer can design and simulate an integrated circuit at the physical description level. DSCH2 allows switching of digital logic design.

A New Simulated Inductor with Reduced Series Resistor Using a Single VCII±

This paper presents a new realization of a grounded simulated inductor using a single dual output second-generation voltage conveyor (VCII±) as an active building block, two resistors and one grounded capacitor. The main characteristic of the proposed circuit is that the value of the series resistor can be significantly reduced. Thus, it has the property of improved low-frequency performance. Another feature is the use of a grounded capacitor that makes the proposed circuit attractive for integrated circuit (IC) realization. A simple CMOS implementation of the required VCII± is used. However, a single passive component-matching condition is required for the proposed structure. As an application example, a standard fifth-order high-pass ladder filter is also given. SPICE simulations using 0.18 μm CMOS technology parameters and a supply voltage of ±0.9 V as well as experimental verifications, are carried out to support the theory.

SC-DDPL as a Countermeasure against Static Power Side-Channel Attacks

With the continuous scaling of CMOS technology, which has now reached the 3 nm node at production level, static power begins to dominate the power consumption of nanometer CMOS integrated circuits. A novel class of security attacks to cryptographic circuits which exploit the correlation between the static power and the secret keys was introduced more than ten years ago, and, since then, several successful key recovery experiments have been reported. These results clearly demonstrate that attacks exploiting static power (AESP) represent a serious threat for cryptographic systems implemented in nanometer CMOS technologies. In this work, we analyze the effectiveness of the Standard Cell Delay-based Precharge Logic (SC-DDPL) style in counteracting static power side-channel attacks. Experimental results on an FPGA implementation of a compact PRESENT crypto-core show that the SC-DDPL implementation allows a great improvement of all the security metrics with respect to the standard CMOS implementation and other state-of-the-art countermeasures such as WDDL and MDPL.

Hybrid memristor-CMOS implementation of logic gates design using LTSpice

In this paper, a hybrid memristor-CMOS implementation of logic gates simulated using LTSpice. Memristors' implementation in computer architecture designs explored in various design structures proposed by researchers from all around the world. However, all prior designs have some drawbacks in terms of applicability, scalability, and performance. In this research, logic gates design based on the hybrid memristor-CMOS structure presented. 2-inputs AND, OR, NAND, NOR, XOR, and XNOR are demonstrated with minimum components requirements. In addition, a 1-bit full adder circuit with high performance and low area consumption is also proposed. The proposed full adder only consists of 4 memristors and 7 CMOS transistors. Half design of the adder base on the memristor component created. Through analysis and simulations, the memristor implementation on designing logic gates using memristor-CMOS structure demonstrated using the generalized metastable switch memristor (MSS) model and LTSpice. In conclusion, the proposed approach improves speed and require less area.

Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL

A great deal of effort has recently been devoted to extending the usage of memristor technology from memory to computing. Memristor-based logic design is an emerging concept that targets efficient computing systems. Several logic families have evolved, each with different attributes. Memristor Ratioed Logic (MRL) has been recently introduced as a hybrid memristor–CMOS logic family. MRL requires an efficient design strategy that takes into consideration the implementation phase. This paper presents a novel MRL-based crossbar design: X-MRL. The proposed structure combines the density and scalability attributes of memristive crossbar arrays and the opportunity of their implementation at the top of CMOS layer. The evaluation of the proposed approach is performed through the design of an X-MRL-based full adder. The design is presented with its layout and corresponding simulation results using the Cadence Virtuoso toolset and CMOS 65nm process. The comparison with a pure CMOS implementation is promising in terms of the area, as our approach exhibits a 44.79% area reduction. Moreover, the combined Energy.Delay metric demonstrates a significant improvement (between ×5.7 and ×31) with respect to the available literature.