Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

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Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells

Journal of Electronic Materials ◽

10.1007/s11664-015-3895-1 ◽

2015 ◽

Vol 44 (9) ◽

pp. 3188-3193 ◽

Cited By ~ 3

Author(s):

J. Kondo ◽

M. Lingalugari ◽

P.-Y. Chan ◽

E. Heller ◽

F. Jain

Keyword(s):

Quantum Dot ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Floating Gate ◽

Memory Cells

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Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2002.807637 ◽

2002 ◽

Vol 2 (4) ◽

pp. 80-88 ◽

Cited By ~ 7

Author(s):

F. Schuler ◽

R. Degraeve ◽

P. Hendrickx ◽

D. Wellekens

Keyword(s):

Charge Transport ◽

Leakage Current ◽

Nonvolatile Memory ◽

Floating Gate ◽

Memory Cells ◽

Transport Models

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Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

Solid-State Electronics ◽

10.1016/j.sse.2007.02.012 ◽

2007 ◽

Vol 51 (4) ◽

pp. 585-592 ◽

Cited By ~ 3

Author(s):

Quentin Rafhay ◽

M. Florian Beug ◽

Russell Duane

Keyword(s):

Coupling Coefficient ◽

Statistical Study ◽

Extraction Methods ◽

Floating Gate ◽

Cell Extraction ◽

Gate Capacitance ◽

Floating Gate Memory ◽

Capacitance Coupling

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Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Solid-State Electronics ◽

10.1016/j.sse.2009.01.015 ◽

2009 ◽

Vol 53 (3) ◽

pp. 389-391 ◽

Cited By ~ 4

Author(s):

Seong-Wan Ryu ◽

Jin-Woo Han ◽

Chung-Jin Kim ◽

Sungho Kim ◽

Yang-Kyu Choi

Keyword(s):

Nonvolatile Memory ◽

Random Access ◽

Random Access Memory ◽

Floating Gate ◽

Floating Body ◽

Access Memory

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The Combined Effects of Cycling Endurance and TID on Floating Gate Memory Cells

Chinese Physics B ◽

10.1088/1674-1056/ac3d80 ◽

2021 ◽

Author(s):

Side Song ◽

Guozhu Liu ◽

Qi He ◽

Xiang Gu ◽

Genshen Hong ◽

...

Keyword(s):

Radiation Effects ◽

Memory Cell ◽

Floating Gate ◽

Combined Effects ◽

Memory Cells ◽

Threshold Voltage Shift ◽

Floating Gate Memory ◽

Interface Generation ◽

Radiation Hardened ◽

Radiation Induced

Abstract In this paper, the combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, the results indicate that: 1.The programmed flash cells with a prior appropriate number of program and erase cycling stress exhibit much smaller threshold voltage shift than their counterpart in response to radiation, which is mainly ascribed to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate; 2.The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in both of the programmed state and erased state; 3. Radiation is more likely to induce interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.

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