Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO

2016 ◽  
Vol 109 (5) ◽  
pp. 053507 ◽  
Author(s):  
Zong-Han Lin ◽  
Yeong-Her Wang
Keyword(s):  
Resistive Switching ◽  
Ion Migration ◽  
Indium Ion

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

2012 ◽  
Vol 59 (9) ◽  
pp. 2461-2467 ◽  
Author(s):  
Federico Nardi ◽  
Stefano Larentis ◽  
Simone Balatti ◽  
David C. Gilmer ◽  
Daniele Ielmini
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Ion Migration

Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO2-Based Resistive Random Access Memory Devices with Different Electrode Materials

2020 ◽  
Vol 20 (10) ◽  
pp. 6489-6494
Author(s):  
Batkhuyag Khorolsuren ◽  
Shenmin Lu ◽  
Chao Sun ◽  
Fang Jin ◽  
Wenqin Mo ◽  
...  
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Electrode Materials ◽  
Metal Electrode ◽  
Ion Migration ◽  
Resistive Layer ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Oxygen Ion Migration ◽  
Resistive Switching Mechanism

To study the substitutability of noble metal electrodes in memristors, the effect of Pt/HfO2/Ti structure on the replacement of noble metal electrode Pt by different electrodes was studied. Compared with the unsubstituted devices, the HfO2-based RRAM devices with TiN and TiOxNy electrodes devices showed good resistive switching performance and resistive switching mechanism under oxygen ion migration. Five devices were prepared, and their resistive switching mechanism under oxygen ion migration was investigated. Moreover, besides the resistive switching phenomenon of these RRAM devices, it was found that significant rectifying characteristics were exhibited in a highresistance state (HRS). This phenomenon can be explained by regulation of the Schottky barrier of the interface between the top electrode and the resistive layer, which can be influenced by the migration of oxygen vacancies.

scholarly journals Resistive Switching in Ge0.3Se0.7Films by Means of Copper Ion Migration

2007 ◽  
Vol 221 (11-12) ◽  
pp. 1469-1478 ◽  
Author(s):  
C. Schindler ◽  
X. Guo ◽  
A. Besmehn ◽  
R. Waser
Keyword(s):  
Resistive Switching ◽  
Copper Ion ◽  
Ion Migration

A resistive device with electrolyte as active electrode

2020 ◽  
Vol 34 (28) ◽  
pp. 2050267
Author(s):  
Tian Kang ◽  
Xiaoyu Chen ◽  
Jia Zhu ◽  
Yun Huang ◽  
Zhuojie Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory ◽  
Conductive Filament ◽  
Active Electrode ◽  
Ion Migration ◽  
Resistance Random Access Memory ◽  
Switching Characteristics

Due to the outstanding performance of resistance random access memory (RRAM) in the memory field, the study of resistive switching (RS) phenomena has become extremely noticeable in the recent years. The mechanism of metal conductive filamentary RRAM is already clear, but the conditions of the RS are still unclear. Therefore, this paper aims to explore the conditions for the occurrence of resistive, using a new RS structure called Electrolyte-Oxide-Semiconductor (EOS). This structure is based on the formation of metal conductive filament and exhibits the unipolar switching characteristics. Due to the formation or rupture of the conductive filaments, this device exhibits different resistance states. A series model of electrolyte and conductive filaments is used to explain the IV curve of this device. Compared with the device using a metal active electrode, the active electrode of this device is originally ionized. Therefore, it would be a better tool to explore the mechanism of ion migration and the formation of conductive filaments. Materials screening of metal in RRAM would also be more efficient.

scholarly journals Механизмы токопереноса и резистивного переключения в конденсаторах со слоями стабилизированного иттрием диоксида гафния

2019 ◽  
Vol 89 (6) ◽  
pp. 927
Author(s):  
С.В. Тихов ◽  
О.Н. Горшков ◽  
А.И. Белов ◽  
И.Н. Антонов ◽  
А.И. Морозов ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Ion Concentration ◽  
Small Signal ◽  
Current Transport ◽  
Initial State ◽  
Ion Migration ◽  
Influence Of Temperature ◽  
Different Temperatures ◽  
Migration Polarization ◽  
First Time

AbstractThe peculiarities of resistive switching in capacitors with yttria-stabilized hafnia layers were studied. The characteristics of current transport in the initial state and after electroforming and resistive switching at different temperatures were examined. The parameters of a small-signal equivalent circuit of a capacitor were determined for switching into low- and high-resistance states. These parameters suggest that the resistance of filaments changes after each successive switching. This provides an opportunity to use such measurements to determine the nature of resistive switching and verify the reproducibility of its parameters. The contribution of electron traps to switching was revealed. Ion migration polarization was observed at temperatures above 500 K, and the activation energy of ion migration and the ion concentration were determined. The effect of resistive switching under the influence of temperature was observed and interpreted for the first time.

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