Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

2013 ◽  
Vol 60 (1) ◽  
pp. 92-96 ◽  
Author(s):  
Hsu-Yu Chang ◽  
Bruce Adams ◽  
Po-Yen Chien ◽  
Jiping Li ◽  
Jason C. S. Woo
Keyword(s):  
Laser Annealing ◽  
Tunnel Fet ◽  
Output Characteristics

Pocket Vertical Junction-Less U-Shape Tunnel FET and Its Challenges in Nano-Scale Regime

2019 ◽  
Vol 11 (12) ◽  
pp. 1225-1230
Author(s):  
Suman Lata Tripathi
Keyword(s):  
Low Voltage ◽  
Tunneling Current ◽  
Channel Length ◽  
Vital Role ◽  
Subthreshold Slope ◽  
Subthreshold Region ◽  
Switching Performance ◽  
Tunnel Fet ◽  
Output Characteristics ◽  
Improve Device

Low voltage application of Tunnel FET with steep subthreshold slope, has potential to replace its MOSFET counterpart for future scaling due to thermal limits imposed on nano-level transistors. Longer channel region increases the tunneling area results in increasing tunneling current and decreasing miller capacitance to improve device switching performance for digital application. A new pocket tunnel junction-less UTFET (JLUTFET) exploits increased channel length with U shape and high ON current capability of junction-less transistor provide better device performance in subthreshold region showing improvement in ION/IOFF(∼109) as compared to other similar conventional TFET and vertical TFET structures. The proposed nJLUTFET also shows lower drain induced barrier lowering (<20 mV/V) and near to ideal subthreshold slope (∼66 mV/decade). The temperature analysis plays a vital role to decide a stable ON and OFF-state performance of transistors. So, the proposed pocket JLUTFET is investigated for temperature variations (ranging 250–400 K) to characterize the performance such as transfer characteristics, Output characteristics and ION/IOFF ratio. The proposed n-channel JLUTFET has been designed on visual TCAD 2D/3D device simulator.

scholarly journals An Accurate Analytical Model for Tunnel FET Output Characteristics

2019 ◽  
Vol 40 (6) ◽  
pp. 1001-1004 ◽  
Author(s):  
Yunhe Guan ◽  
Zunchao Li ◽  
Hamilton Carrillo-Nunez ◽  
Yefei Zhang ◽  
Vihar P. Georgiev ◽  
...  
Keyword(s):  
Analytical Model ◽  
Tunnel Fet ◽  
Output Characteristics

THE EFFECT OF LOCAL LASER ANNEALING ON THE MAGNETIC PROPERTIES OF AMORPHOUS RIBBONS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1325-C8-1326
Author(s):  
P. Sánchez ◽  
M. C. Sánchez ◽  
E. López ◽  
M. García ◽  
C. Aroca
Keyword(s):  
Magnetic Properties ◽  
Laser Annealing ◽  
Amorphous Ribbons

Simulated Power Source Based on Output Characteristics of Solar Cell.

1993 ◽  
Vol 113 (6) ◽  
pp. 753-759 ◽  
Author(s):  
Kuniho Tanaka ◽  
Etsuo Sakoguchi ◽  
Eiji Yamada
Keyword(s):  
Solar Cell ◽  
Power Source ◽  
Output Characteristics

Effects of Winding Attachment Positions on Output Characteristics of Flux-Modulating Synchronous Machines

2012 ◽  
Vol 132 (9) ◽  
pp. 922-930 ◽  
Author(s):  
Hirofumi Aoki ◽  
Tadashi Fukami ◽  
Kazuo Shima ◽  
Toshihiro Tsuda ◽  
Mitsuhiro Kawamura
Keyword(s):  
Synchronous Machines ◽  
Output Characteristics

Orientation Control and Properties of PZT Film Crystalized using Laser Annealing System

2016 ◽  
Vol 136 (12) ◽  
pp. 493-498 ◽  
Author(s):  
Junko Kazusa ◽  
Kazuhiro Koga ◽  
Norio Umeyama ◽  
Fumito Imura ◽  
Daiji Noda ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Orientation Control ◽  
Pzt Film

Laser Annealing of Te-Implanted III-V Semiconductors Studied by Mossbauer Spectroscopy

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Van Rossum ◽  
I. Dezsi ◽  
G. Langouche ◽  
J. De Bruyn ◽  
R. Coussement
Keyword(s):  
Mössbauer Spectroscopy ◽  
Laser Annealing ◽  
Mossbauer Spectroscopy ◽  
Quadrupole Split ◽  
Annealing Behaviour ◽  
Mößbauer Spectroscopy ◽  
Annealing Procedure

ABSTRACTThe laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.

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