Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

2015 ◽  
Vol 62 (11) ◽  
pp. 3482-3489 ◽  
Author(s):  
Jeremy Guy ◽  
Gabriel Molas ◽  
Philippe Blaise ◽  
Mathieu Bernard ◽  
Anne Roule ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Conductive Bridge

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

2015 ◽  
Vol 36 (2) ◽  
pp. 129-131 ◽  
Author(s):  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Hongtao Liu ◽  
Tiancheng Gong ◽  
Guoming Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Single Filament ◽  
Low Resistance ◽  
Conductive Bridge ◽  
Resistance State

scholarly journals Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

2020 ◽  
Vol 1 ◽  
pp. 163-169
Author(s):  
Hyangwoo Kim ◽  
Hyeonsu Cho ◽  
Byoung Don Kong ◽  
Jin-Woo Kim ◽  
Meyya Meyyappan ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Retention Characteristics

scholarly journals Highly Reliable Memory Operation of High Density Three-Terminal Thyristor Random Access Memory

2021 ◽  
Author(s):  
Hyangwoo Kim ◽  
Hyeonsu Cho ◽  
Hyeon-Tak Kwak ◽  
Myunghae Seo ◽  
Seungho Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Data Retention ◽  
Access Memory ◽  
Cathode Voltage ◽  
Cross Point ◽  
Memory Array ◽  
Retention Characteristics ◽  
Power Operation

Abstract Three-terminal (3-T) thyristor random-access memory is explored for a next generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (VGC,ST) and anode- cathode voltage (VAC,ST) in the standby state for superior data retention characteristics and low-power operation. The device with the optimized VGC,ST of -0.4 V and VAC,ST of 0.6 V shows the continuous data retention capability without refresh operation with a low standby current of 1.14 pA. In addition, a memory array operation scheme of 3-T TRAM is proposed to address array disturbance issues. The presented array operation scheme can efficiently minimize program, erase and read disturbances on unselected cells by adjusting gate-cathode voltage. The standby voltage turns out to be beneficial to improve retention characteristics: over 10 s. With the proposed memory array operation, 3-T TRAM can provide excellent data retention characteristics and high-density memory configurations comparable with or surpass conventional dynamic random-access memory (DRAM) technology.

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