1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb<inf>2</inf>Te<inf>3</inf> super-lattice films

Abstract Three-terminal (3-T) thyristor random-access memory is explored for a next generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (VGC,ST) and anode- cathode voltage (VAC,ST) in the standby state for superior data retention characteristics and low-power operation. The device with the optimized VGC,ST of -0.4 V and VAC,ST of 0.6 V shows the continuous data retention capability without refresh operation with a low standby current of 1.14 pA. In addition, a memory array operation scheme of 3-T TRAM is proposed to address array disturbance issues. The presented array operation scheme can efficiently minimize program, erase and read disturbances on unselected cells by adjusting gate-cathode voltage. The standby voltage turns out to be beneficial to improve retention characteristics: over 10 s. With the proposed memory array operation, 3-T TRAM can provide excellent data retention characteristics and high-density memory configurations comparable with or surpass conventional dynamic random-access memory (DRAM) technology.

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Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

Nanomaterials ◽

10.3390/nano10030457 ◽

2020 ◽

Vol 10 (3) ◽

pp. 457 ◽

Cited By ~ 4

Author(s):

Lei Wu ◽

Hongxia Liu ◽

Jinfu Lin ◽

Shulong Wang

Keyword(s):

Thermal Annealing ◽

High Performance ◽

Electrical Characteristic ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Data Retention ◽

Access Memory ◽

Before And After ◽

Retention Characteristics

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

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The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

MRS Proceedings ◽

10.1557/opl.2014.792 ◽

2014 ◽

Vol 1691 ◽

Cited By ~ 1

Author(s):

Ryosuke Ogata ◽

Masataka Yoshihara ◽

Naohiro Murayama ◽

Satoru Kishida ◽

Kentaro Kinoshita

Keyword(s):

Grain Boundary ◽

Room Temperature ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Data Retention ◽

Access Memory ◽

Influence Of Water ◽

Retention Characteristics ◽

Memory Characteristics

ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

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Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

Applied Physics Letters ◽

10.1063/1.2339032 ◽

2006 ◽

Vol 89 (10) ◽

pp. 103509 ◽

Cited By ~ 187

Author(s):

K. Kinoshita ◽

T. Tamura ◽

M. Aoki ◽

Y. Sugiyama ◽

H. Tanaka

Keyword(s):

Transition Metal ◽

Metal Oxide ◽

Random Access ◽

Random Access Memory ◽

Transition Metal Oxide ◽

Resistive Random Access Memory ◽

Dependent Data ◽

Data Retention ◽

Access Memory

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Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.086502 ◽

2012 ◽

Vol 51 (8R) ◽

pp. 086502 ◽

Cited By ~ 1

Author(s):

Chung-Yuan Lee ◽

Chao-Sung Lai ◽

Chia-Ming Yang ◽

David HL Wang ◽

Betty Lin ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Clamping Force ◽

Data Retention ◽

Access Memory

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Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb2Te Thin Films for Phase Change Random Access Memory

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.367.26 ◽

2013 ◽

Vol 367 ◽

pp. 26-31

Author(s):

Su Yuan Bai ◽

Zhe Nan Tang ◽

Zheng Xing Huang ◽

Yi Feng Gu

Keyword(s):

Thin Films ◽

Phase Transition ◽

Thermal Conductivity ◽

Phase Change ◽

Composite Films ◽

Random Access ◽

Random Access Memory ◽

Data Retention ◽

Access Memory ◽

Ge Doping

The Ge doped Sb2Te thin films (Ge2Sb2Te5, Ge0.15Sb2Te and Ge0.61Sb2Te) were deposited by magnetron co-sputtering using Ge and Sb2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge0.61Sb2Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge0.61Sb2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.

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