Investigation and Comparison of Quantum-Capacitance Induced Inversion-Charge Loss for Ultra-Thin-Body and Double-Gate III-V n-MOSFETs

2015 ◽  
Author(s):  
S.L. Shen ◽  
H.H. Shen ◽  
C.H. Yu ◽  
P. Su
Keyword(s):  
Quantum Capacitance ◽  
Thin Body ◽  
Double Gate ◽  
Charge Loss ◽  
Inversion Charge

Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

2008 ◽  
Vol 17 (8) ◽  
pp. 3077-3082 ◽  
Author(s):  
Luan Su-Zhen ◽  
Liu Hong-Xia
Keyword(s):  
Schottky Barrier ◽  
Compact Model ◽  
Thin Body ◽  
Double Gate

Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

2006 ◽  
Vol 53 (6) ◽  
pp. 3363-3371 ◽  
Author(s):  
D. Munteanu ◽  
V. Ferlet-Cavrois ◽  
J. L. Autran ◽  
P. Paillet ◽  
J. Baggio ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Quantum Effects ◽  
Heavy Ion ◽  
Thin Body ◽  
Double Gate ◽  
Heavy Ion Irradiation

ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS

2013 ◽  
Vol 12 (01) ◽  
pp. 1350005 ◽  
Author(s):  
VIMALA PALANICHAMY ◽  
N. B. BALAMURUGAN
Keyword(s):  
Numerical Solutions ◽  
Inversion Layer ◽  
Drain Current ◽  
Quantum Effects ◽  
Schrodinger Equations ◽  
Double Gate ◽  
Schrödinger Equations ◽  
Inversion Charge ◽  
Physical Insight ◽  
Quantum Mechanical Effects

An analytical model for double-gate (DG) MOSFETs considering quantum mechanical effects is proposed in this paper. Schrödinger and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum effects (QME) that influence the performance of DG MOSFETs. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion layer centroid, inversion charge, gate capacitance, drain current and transconductance. We systematically evaluate and analyze the parameters of DG MOSFETs considering QME. The analytical solutions are simple, accurate and provide good physical insight into the quantization caused by quantum confinement under various gate biases. The analytical results of this model are verified by comparing the data obtained with one-dimensional self-consistent numerical solutions of Poisson and Schrödinger equations known as SCHRED.

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