Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects

2013 ◽  
Vol 34 (11) ◽  
pp. 114001 ◽  
Author(s):  
P. Vimala ◽  
N. B. Balamurugan
Keyword(s):  
Modeling And Simulation ◽  
Charge Density ◽  
Quantum Effects ◽  
Surrounding Gate ◽  
Inversion Charge ◽  
And Inversion

Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

2008 ◽  
Vol 55 (1) ◽  
pp. 411-416 ◽  
Author(s):  
J. B. Roldan ◽  
AndrÉs Godoy ◽  
Francisco Gamiz ◽  
M. Balaguer
Keyword(s):  
Quantum Effects ◽  
Surrounding Gate ◽  
Inversion Charge

Analytical modeling of quantization effects in surrounding-gate MOSFETs

2013 ◽  
Vol 33 (1/2) ◽  
pp. 630-644 ◽  
Author(s):  
Vimala Palanichamy ◽  
N.B. Balamurugan
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
Quantum Effects ◽  
Physical Models ◽  
Threshold Region ◽  
Content Type ◽  
Surrounding Gate ◽  
Inversion Charge ◽  
The Impact ◽  
Device Operation

Purpose – The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects. Design/methodology/approach – To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results. Findings – This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge centroid, threshold voltage, inversion charge, gate capacitance and drain current. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different dimensions and bias voltages. Practical implications – Simulation based on the compact physical models reduces the cost of developing a sophisticated fabrication technology and shortens the time-to-market. They may also be utilized to explore innovative device structures. Originality/value – This paper presents, for the first time, a compact quantum analytical model for cylindrical surrounding gate MOSFETs which predicts the device characteristics reasonably well over the entire range of device operation (above threshold as well as sub-threshold region).

Explicit Quantum Drain Current Model for Symmetric Double Gate MOSFETs

2020 ◽  
Vol 61 ◽  
pp. 88-96
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Charge Density ◽  
Current Model ◽  
Mathematical Expression ◽  
Drain Current ◽  
Quantum Effects ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Double Gate ◽  
Inversion Charge

In this article, an analytical model for Double gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) is developed including Quantum effects. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for inversion charge density is obtained and the model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. Based on inversion charge density model the compact model is developed for transfer characteristics, transconductance and C-V curves of DG MOSFETs. The results of the model are compared to the simulated results. The comparison shows the accuracy of the proposed model.

scholarly journals A comparative study of hole and electron inversion layer quantization in MOS structures

2010 ◽  
Vol 7 (2) ◽  
pp. 185-193 ◽  
Author(s):  
Amit Chaudhry ◽  
Nath Roy
Keyword(s):  
Charge Density ◽  
Marked Decrease ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Capacitance ◽  
Variation Approach ◽  
Inversion Charge ◽  
Mos Structures ◽  
Good Agreement

In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

Quantum effects on impurity pinning and depinning of Charge Density Waves

Physica B+C ◽  
1986 ◽  
Vol 143 (1-3) ◽  
pp. 143-145
Author(s):  
Tetsuro Saso ◽  
Yoshikazu Suzumura
Keyword(s):  
Charge Density ◽  
Quantum Effects ◽  
Charge Density Waves ◽  
Density Waves

ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS

2013 ◽  
Vol 12 (01) ◽  
pp. 1350005 ◽  
Author(s):  
VIMALA PALANICHAMY ◽  
N. B. BALAMURUGAN
Keyword(s):  
Numerical Solutions ◽  
Inversion Layer ◽  
Drain Current ◽  
Quantum Effects ◽  
Schrodinger Equations ◽  
Double Gate ◽  
Schrödinger Equations ◽  
Inversion Charge ◽  
Physical Insight ◽  
Quantum Mechanical Effects

An analytical model for double-gate (DG) MOSFETs considering quantum mechanical effects is proposed in this paper. Schrödinger and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum effects (QME) that influence the performance of DG MOSFETs. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion layer centroid, inversion charge, gate capacitance, drain current and transconductance. We systematically evaluate and analyze the parameters of DG MOSFETs considering QME. The analytical solutions are simple, accurate and provide good physical insight into the quantization caused by quantum confinement under various gate biases. The analytical results of this model are verified by comparing the data obtained with one-dimensional self-consistent numerical solutions of Poisson and Schrödinger equations known as SCHRED.

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