A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2870249 ◽

2018 ◽

Vol 65 (11) ◽

pp. 4988-4994 ◽

Author(s):

Zhijun Lyu ◽

Hongliang Lu ◽

Yuming Zhang ◽

Yimen Zhang ◽

Bin Lu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Source Depletion

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An analytical drain current model for graphene nanoribbon tunnel field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab36af ◽

2019 ◽

Vol 58 (9) ◽

pp. 095001

Author(s):

Jiarui Bao ◽

Shuyan Hu ◽

Guangxi Hu ◽

Laigui Hu ◽

Ran Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Graphene Nanoribbon

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Explicit drain current model of junctionless double-gate field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.07.015 ◽

2013 ◽

Vol 89 ◽

pp. 134-138 ◽

Author(s):

Ashkhen Yesayan ◽

Fabien Prégaldiny ◽

Jean-Michel Sallese

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

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Phonon Scattering Effects in Drain-Current Model of Carbon Nanotube and Silicon Nanowire Field-Effect Transistors

Science of Advanced Materials ◽

10.1166/sam.2016.2687 ◽

2016 ◽

Vol 8 (5) ◽

pp. 1028-1035 ◽

Author(s):

Huei Chaeng Chin ◽

Cheng Siong Lim ◽

Michael Loong Peng Tan

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Phonon Scattering ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Current Model ◽

Drain Current ◽

Scattering Effects

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A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.024301 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 024301 ◽

Author(s):

Guohe Zhang ◽

Kebin Chen ◽

Feng Liang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Subthreshold Current ◽

Gaussian Profile

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A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

Solid-State Electronics ◽

10.1016/j.sse.2017.01.003 ◽

2017 ◽

Vol 130 ◽

pp. 33-40 ◽

Author(s):

Raksharam ◽

Aloke K. Dutta

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.024301 ◽

2012 ◽

Vol 51 ◽

pp. 024301 ◽

Author(s):

Guohe Zhang ◽

Kebin Chen ◽

Feng Liang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Subthreshold Current ◽

Gaussian Profile

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New Analytical Drain Current Model for the Sub-Linear Region of Output Characteristics of Graphene Field-Effect Transistors in the Low Carrier Density Limit

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.10082 ◽

2014 ◽

Vol 14 (12) ◽

pp. 9082-9087

Author(s):

Dongheon Lee ◽

Kihwan Lee ◽

Kangmin Kim ◽

Ohyun Kim

Keyword(s):

Carrier Density ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Linear Region ◽

Density Limit ◽

Output Characteristics

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Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2163517 ◽

2011 ◽

Vol 58 (11) ◽

pp. 4049-4052 ◽

Author(s):

David Jimenez ◽

Oana Moldovan

Keyword(s):

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

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An analytical subthreshold current model of short-channel symmetrical double gate-all-around (DGAA) field-effect-transistors

2017 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2017.8073938 ◽

2017 ◽

Author(s):

Shiv Bhushan ◽

Arun Kumar ◽

Deepti Gola ◽

Pramod Kumar Tiwari

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Double Gate ◽

Short Channel ◽

Subthreshold Current

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A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current Model

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2233863 ◽

2013 ◽

Vol 60 (2) ◽

pp. 848-855 ◽

Author(s):

Juan Pablo Duarte ◽

Sung-Jin Choi ◽

Dong-Il Moon ◽

Jae-Hyuk Ahn ◽

Jee-Yeon Kim ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

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