Interesting Odd–Even Effect, Ohmic Contact, Negative Differential Resistance, and Current Stabilizer Behavior in All-Carbon Graphyne/Carbon-Chain Junctions

2020 ◽  
Vol 67 (6) ◽  
pp. 2529-2535
Author(s):  
Jiangni Yun ◽  
Huan An ◽  
Renjing Huang ◽  
Mingzhi Guo ◽  
Yanni Zhang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Carbon Chain ◽  
Current Stabilizer

Modulation of Low Bias Negative Differential Resistance in a Molecular Device by Adjusting Anchoring Groups

2014 ◽  
Vol 1070-1072 ◽  
pp. 479-482
Author(s):  
Li Hua Wang ◽  
Heng Fang Meng ◽  
Bing Jun Ding ◽  
Yong Guo
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Function Method ◽  
Differential Resistance ◽  
Carbon Chain ◽  
Molecular Device ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Anchoring Groups

We investigate electronic transport properties of molecular device models constructed by a dipyrimidinyl–dimethyl molecule embedding in a carbon chain, which are then coupled to the gold electrodes through thiol or isocyanide group. Using the density functional theory combined with the nonequilibrium Green’s function method, negative differential resistance behaviors are observed in such molecular junctions. Most importantly, system with the isocyanide group can achieve a larger negative differential resistance at lower bias voltage (0.1V).

Spin Filter and Negative Differential Resistance in Carbon-Based Device with Defects

2017 ◽  
Vol 727 ◽  
pp. 427-431 ◽  
Author(s):  
Zhao Hui Gong ◽  
Tong Sheng Xia ◽  
Ya Xin Wang
Keyword(s):  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Carbon Chain ◽  
Nitrogen Vacancy ◽  
Spin Filter ◽  
Vacancy Defects ◽  
Spintronic Devices ◽  
Potential Applications ◽  
Negative Differential Resistance Effect

In this work, we report the electronic transport properties of an atomic carbon chain sandwiched between two ferromagnetic zigzag graphene nanoribbon electrodes with symmetrical nitrogen-vacancy defects using the density functional theory combining with the non-equilibrium Green’s function method. Our results show that a perfect spin filter is observed with almost 100% spin polarization. Moreover, we also see the negative differential resistance effect from the spin-up current under a low positive voltage bias. These results may promise potential applications in spintronic devices with multi-function in the future.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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