Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor

2020 ◽  
Vol 67 (9) ◽  
pp. 3745-3752
Author(s):  
Xianglong Li ◽  
Yabin Sun ◽  
Ziyu Liu ◽  
Xiaojin Li ◽  
Yanling Shi ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Modulation Effect ◽  
Metal Work Function ◽  
Effect Transistor ◽  
Metal Work

scholarly journals Impact of band to band Tunneling on Transient performance of Dual Gate Tunnel Field Effect Transistor (TFET)

2019 ◽  
Vol 8 (9) ◽  
pp. 284-288
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Digital Circuit ◽  
Voltage Range ◽  
Metal Work Function ◽  
Band To Band Tunneling ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Metal Work

Tunnel Field Effect Transistor (TFET) is gated reverse biased P-I-N diode structured semiconductor device and can be considered as a reliable low power device. TCAD (Sentaurus 2D) simulations for various Gate metal work function (4.1-4.3 eV) shows that its ON-current (ION) arises from quantum mechanical band-to-band tunneling (B2BT) and observed that threshold Voltage (VT) for TFET decreases with increase in Gate metal work function. The thermionic emission of electrons in MOSFET limits the sub-threshold swing (SS) by 60 mV/dec whereas TFET has potential for low SS ie. SS<60 mV/dec. TCAD Simulations confirmed that that the Gate – Drain capacitance (Cgd) strongly follows the Gate capacitance (Cgg) all over the voltage range (0-0.9V) which increases the miller capacitance for TFET. It is investigated that for TFET, the injection of carriers into the channel is through B2BT which effectively couples the Gate charge to the Drain. A look up table based Verilog-A model is generated for TFET and used to simulate the static and dynamic behavior of TFET based digital circuit in Cadence spectre. Miller effect causes the peak voltage overshoots are noticed at the drain side during transient responses and can be responsible for dynamic power loss and high turn ON/OFF delay

The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment

Nanoscale ◽  
2019 ◽  
Vol 11 (37) ◽  
pp. 17368-17375 ◽  
Author(s):  
Inyong Moon ◽  
Sungwon Lee ◽  
Myeongjin Lee ◽  
Changsik Kim ◽  
Daehee Seol ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Work Function ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Plasma Channel ◽  
Thermal Limit ◽  
Channel Resistance ◽  
Effect Transistor

WSe2 FET oxidized by plasma. Channel resistance decreases exponentially with increasing WSe2 work function, approaching thermal limit.

Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe2field-effect transistor

2015 ◽  
Vol 26 (45) ◽  
pp. 455203 ◽  
Author(s):  
Inyeal Lee ◽  
Servin Rathi ◽  
Lijun Li ◽  
Dongsuk Lim ◽  
Muhammad Atif Khan ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Work Function ◽  
Effect Transistor ◽  
Metal Work

Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function

2008 ◽  
Vol 47 (6) ◽  
pp. 4385-4391 ◽  
Author(s):  
Kyoung-Rok Han ◽  
Byung-Kil Choi ◽  
Hyuck-In Kwon ◽  
Jong-Ho Lee
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Gate Work Function

scholarly journals Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

2009 ◽  
Vol 95 (24) ◽  
pp. 243105 ◽  
Author(s):  
Noejung Park ◽  
Bum-Kyu Kim ◽  
Jeong-O Lee ◽  
Ju-Jin Kim
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Dirac Point ◽  
Field Effect Transistors ◽  
Metal Work Function ◽  
Metal Work
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