Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects

2020 ◽  
Vol 67 (11) ◽  
pp. 4757-4764
Author(s):  
Nilesh Pandey ◽  
Yogesh Singh Chauhan
Keyword(s):  
Quantum Confinement ◽  
Analytical Modeling ◽  
Negative Capacitance ◽  
Short Channel Effects ◽  
Confinement Effects ◽  
Short Channel ◽  
Quantum Confinement Effects ◽  
Channel Effects

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influence on Short-Channel Effects in SOI MOSFET's

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 822-826 ◽  
Author(s):  
Hans-Oliver Joachim ◽  
Yasuo Yamaguchi ◽  
Yasuo Inoue ◽  
Natsuro Tsubouchi
Keyword(s):  
Analytical Modeling ◽  
Two Dimensional ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FD03 ◽  
Author(s):  
Hiroyuki Ota ◽  
Junichi Hattori ◽  
Hidehiro Asai ◽  
Tsutomu Ikegami ◽  
Koichi Fukuda ◽  
...  
Keyword(s):  
Steep Slope ◽  
Negative Capacitance ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects
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