Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

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Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3022002 ◽

2020 ◽

Vol 67 (11) ◽

pp. 4757-4764

Author(s):

Nilesh Pandey ◽

Yogesh Singh Chauhan

Keyword(s):

Quantum Confinement ◽

Analytical Modeling ◽

Negative Capacitance ◽

Short Channel Effects ◽

Confinement Effects ◽

Short Channel ◽

Quantum Confinement Effects ◽

Channel Effects

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Examining the Short Channel Characteristic and Performance of Triple Material Double Gate Silicon-on-Nothing Metal Oxide Semiconductor Field Effect Transistors with Grading Channel Concentration

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2667 ◽

2019 ◽

Vol 14 (12) ◽

pp. 1672-1679 ◽

Cited By ~ 1

Author(s):

Ningombam Ajit Kumar ◽

Aheibam Dinamani Singh ◽

Nameirakpam Basanta Singh

Keyword(s):

Surface Potential ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Parabolic Approximation ◽

Short Channel ◽

Channel Characteristic ◽

Channel Effects ◽

And Performance

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

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