Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)

2015 ◽  
Vol 85 ◽  
pp. 357-369 ◽  
Author(s):  
Vadthiya Narendar ◽  
R.A. Mishra
Keyword(s):  
Modeling And Simulation ◽  
Analytical Modeling ◽  
Short Channel Effects ◽  
Short Channel ◽  
High K ◽  
Channel Effects ◽  
The Impact

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

2012 ◽  
Vol 67 (6-7) ◽  
pp. 317-326 ◽  
Author(s):  
Alireza Heidari ◽  
Niloofar Heidari ◽  
Foad Khademi Jahromi ◽  
Roozbeh Amiri ◽  
Mohammadali Ghorbani
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Open Boundary ◽  
Double Gate ◽  
Short Channel Effects ◽  
Drain Voltage ◽  
Short Channel ◽  
Channel Effects ◽  
The Impact

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influence on Short-Channel Effects in SOI MOSFET's

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 822-826 ◽  
Author(s):  
Hans-Oliver Joachim ◽  
Yasuo Yamaguchi ◽  
Yasuo Inoue ◽  
Natsuro Tsubouchi
Keyword(s):  
Analytical Modeling ◽  
Two Dimensional ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

2017 ◽  
Vol 7 (4) ◽  
pp. 1899
Author(s):  
Mohammed Khaouani ◽  
Ahlam Guen-Bouazza
Keyword(s):  
Single Channel ◽  
Numerical Study ◽  
Drain Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel One ◽  
A Value ◽  
Device Structures ◽  
Channel Effects ◽  
The Impact

<p>Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number<em> </em>on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 10<sup>4</sup>, while our four channels GAA MOSFET showed a value of 10<sup>3</sup>. In addition, a low value of drain induced barrier lowering<em> (DIBL) of </em>60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm.</p>

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

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