Thermal analysis of advanced microelectronic devices using thermoreflectance thermography

A thermal analysis has been made of 40 pin leadless chip carriers (LCC) surface mounted on an alumina substrate. Finite element (FE) codes have been used to numerically simulate the problem. We show both theoretically and experimentally that the junction to case temperature is not a convenient parameter for thermal characterization of the heat transfer processes in the complex geometry under consideration. The geometrical complexity of the problem together with the uncertainty of the thermophysical properties and heat transfer coefficients make accurate thermal characterization difficult for parametric study and design analysis. A method, based on homogenization or simplification of a complex region by introducing an effective homogeneous material, is proposed for thermal analysis of complex geometries and its range of applicability is presented. Using this method, different models of heat transfer can be lumped together and various available computer codes can be utilized for rapid thermal design analysis of microelectronic devices.

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Characterization of Sputtered Films using the Scanning Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070667 ◽

1973 ◽

Vol 31 ◽

pp. 44-45

Author(s):

R. F. Schneidmiller ◽

W. F. Thrower ◽

C. Ang

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Thin Film Deposition ◽

Film Deposition ◽

Sputtered Films ◽

Plasma Sputtering ◽

Microelectronic Devices ◽

Control Film ◽

Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

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Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100097466 ◽

1981 ◽

Vol 39 ◽

pp. 162-163

Author(s):

L. J. Chen ◽

L. S. Hung ◽

J. W. Mayer

Keyword(s):

Ion Beam ◽

Chemical Vapor ◽

Interfacial Reactions ◽

Practical Applications ◽

Microelectronic Devices ◽

Recent Emergence ◽

Chemical Vapor Deposited ◽

Atomic Mixing ◽

Silicon Interface ◽

Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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