scholarly journals Uniform Electric Field Distribution in Microwave Heating Applicators by Means of Genetic Algorithms Optimization of Dielectric Multilayer Structures

2007 ◽  
Vol 55 (1) ◽  
pp. 85-91 ◽  
Author(s):  
E. Dominguez-Tortajada ◽  
J. Monzo-Cabrera ◽  
A. Diaz-Morcillo
Keyword(s):  
Genetic Algorithms ◽  
Electric Field ◽  
Microwave Heating ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Uniform Electric Field ◽  
Multilayer Structures ◽  
Dielectric Multilayer

Inhibiting Effect of Nonlinear Shielding Layer on Electrical Tree Propagation inside Insulation Layer of High-Voltage Cable

2014 ◽  
Vol 989-994 ◽  
pp. 1273-1277
Author(s):  
Chang Ming Li ◽  
Bao Zhong Han ◽  
Long Zhao ◽  
Chun Peng Yin
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
High Voltage ◽  
Electric Field Distribution ◽  
Uniform Electric Field ◽  
Insulation Layer ◽  
Breakdown Time ◽  
Electrical Tree ◽  
Traditional Structure ◽  
Initiation And Propagation

Nonlinear insulated materials can uniform electric field distribution in non-uniform electric field. In order to inhibit the electric tree initiation and propagation inside high-voltage cross-linked polyethylene (XLPE) insulated cable, a kind of 220kV high-voltage XLPE insulated cable with new structure is designed by embedding nonlinear shielding layer into XLPE insulation layer of high-voltage cable with traditional structure in this study. Experimental and simulation results indicate that the nonlinear shielding layer can effectively inhibit electrical tree propagation inside the XLPE specimens, and obviously extend the breakdown time caused by electric tree propagation. When the electrical tree propagates into the nonlinear shielding layer sandwiched between insulation layers of cable, the electric field distribution near the tip of electrical tree is obviously improved. These findings prove the feasibility and the effectivity of inhibiting electrical tree propagation inside high-voltage cable by adding nonlinear shielding layer into the insulation layer.

scholarly journals New Approach for the Prediction of the Electric Field Distribution in Multimode Microwave-Heating Applicators With Mode Stirrers

2004 ◽  
Vol 40 (3) ◽  
pp. 1672-1678 ◽  
Author(s):  
P. Plaza-Gonzalez ◽  
J. Monzo-Cabrera ◽  
J.M. Catala-Civera ◽  
D. Sanchez-Hernandez
Keyword(s):  
Electric Field ◽  
Microwave Heating ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
New Approach

The Electric Field Analysis of Interdigitated Electrode-Array Based on Semi-Analytical Method

2013 ◽  
Vol 562-565 ◽  
pp. 1218-1223
Author(s):  
Jing Tan ◽  
Zhen Fang ◽  
Yong Hong Liu ◽  
Zhan Zhao
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Analytical Method ◽  
Electric Field Distribution ◽  
Electrode Array ◽  
Field Analysis ◽  
Uniform Electric Field ◽  
Interdigitated Electrode ◽  
Theoretical Simulation ◽  
Interdigitated Electrode Array

Dielectrophoresis (DEP) is the action of polarizable particles in non-uniform electric field, which depends on the structure of electrode. In this paper, we present a semi-analytical method, on which the electric field distribution by interdigitated electrode-array with battlement structure is considered. According to the congregational conformation of latex micro-beads which subject to the negative dielectrophoresis movement, the potential-trap by interdigitated electrodes is observed experimentally. The result shows that the theoretical simulation result conforms to actual electric field distribution well. It is proved that semi-analytical method exerts power for the research of dielectrophoresis effectively.

Perimeter Gated Single Photon Avalanche Diodes in Sub-Micron and Deep-Submicron CMOS Processes

2018 ◽  
Vol 27 (03n04) ◽  
pp. 1840018
Author(s):  
Mst Shamim Ara Shawkat ◽  
Mohammad Habib Ullah Habib ◽  
Md Sakib Hasan ◽  
Mohammad Aminul Haque ◽  
Nicole McFarlane
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Breakdown Voltage ◽  
Gate Voltage ◽  
Electric Field Distribution ◽  
Device Simulation ◽  
Deep Submicron ◽  
Uniform Electric Field ◽  
Cmos Process ◽  
Submicron Process

A perimeter gated SPAD (PGSPAD), a SPAD with an additional gate terminal, prevents premature perimeter breakdown in standard CMOS SPADs. At the same time, a PGSPAD takes advantage of the benefits of standard CMOS. This includes low cost and high electronics integration capability. In this work, we simulate the effect of the applied voltage at the perimeter gate to develop a consistent electric field distribution at the junction through physical device simulation. Additionally, the effect of the shape of the device on the electric field distribution has been examined using device simulation. Simulations show circular shape devices provide a more uniform electric field distribution at the junction compared to that of rectangular and octagonal devices. We fabricated PGSPAD devices in a sub-micron process (0.5 μm CMOS process and 0.5 μm high voltage CMOS process) and a deep-submicron process (180 nm CMOS process). Experimental results show that the breakdown voltage increases with gate voltage. The breakdown voltage increases by approximately 1.5 V and 2.5 V with increasing applied gate voltage magnitude from 0 V to 6 V for devices fabricated in 0.5 μm and 180 nm standard CMOS process respectively.

Real-time Imaging of the Electric field Distribution in CdZnTe at low temperature

2009 ◽  
Vol 1164 ◽  
Author(s):  
Paul Sellin ◽  
Georgios Prekas ◽  
Annika Lohstroh ◽  
Ersin Ozsan ◽  
Perumal Veeramani ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Real Time ◽  
Field Distribution ◽  
Alpha Particle ◽  
Electric Field Distribution ◽  
Drift Time ◽  
Uniform Electric Field ◽  
Real Time Imaging ◽  
Czt Detectors

AbstractReal time imaging of the electric field distribution in CZT at low temperature has been carried out using the Pockels electro-optical effect. CZT detectors have been observed to show degraded spectroscopic resolution at low temperature due to so-called ‘polarization’ phenomena. By mounting a CZT device in a custom optical cryostat, we have used Pockels imaging to observe the distortion of the electric field distribution in the temperature range 240K - 300K. At 240K the electric field has a severely non-uniform depth distribution, with a high field region occupying ∼10% of the depth of the device under the cathode electrode and a low field in the remainder of the device. Using an alpha particle source positioned inside the vacuum chamber we have performed simultaneous alpha particle transient current (TCT) measurements. At low temperatures the alpha particle current pulses become significantly shorter, consistent with the reduced electron drift time due to a non-uniform electric field. These data provide useful insights into the mechanisms which limit the spectroscopic performance of CZT devices at reduced temperature.

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