Impact of Temperature Variations on the Device and Circuit Performance of Tunnel FET: A Simulation Study

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2013.2276401 ◽

2013 ◽

Vol 12 (6) ◽

pp. 951-957 ◽

Author(s):

Rakhi Narang ◽

Manoj Saxena ◽

R. S. Gupta ◽

Mridula Gupta

Keyword(s):

Simulation Study ◽

Temperature Variations ◽

Circuit Performance ◽

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A simulation Study of Double Channel Trench gate Tunnel FET for Analog Applications

2020 International Conference on Advances in Computing, Communication & Materials (ICACCM) ◽

10.1109/icaccm50413.2020.9212964 ◽

2020 ◽

Author(s):

Tripuresh Joshi ◽

Yashvir Singh ◽

Balraj Singh

Keyword(s):

Simulation Study ◽

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Influence of temperature variations on radio frequency performance of PNIN gate all around tunnel-FET

2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) ◽

10.1109/rteict.2017.8256772 ◽

2017 ◽

Author(s):

Jaya Madan ◽

Rishu Chaujar

Keyword(s):

Radio Frequency ◽

Temperature Variations ◽

Influence Of Temperature ◽

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Evaluation of circuit performance of T‐shaped tunnel FET

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2019.0456 ◽

2020 ◽

Vol 14 (5) ◽

pp. 667-673

Author(s):

Prabhat Kumar Dubey ◽

Brajesh Kumar Kaushik

Keyword(s):

Circuit Performance ◽

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Study of circuit performance and non quasi static effect in germanium tunnel FET for different temperatures

Microelectronics Journal ◽

10.1016/j.mejo.2019.06.008 ◽

2019 ◽

Vol 90 ◽

pp. 204-210 ◽

Author(s):

Sayani Ghosh ◽

Kalyan Koley ◽

Chandan K. Sarkar

Keyword(s):

Circuit Performance ◽

Different Temperatures ◽

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Simulation study of hetero dielectric tri material gate tunnel FET based common source amplifier circuit

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2018.12.004 ◽

2019 ◽

Vol 99 ◽

pp. 258-263 ◽

Author(s):

Umesh Dutta ◽

M.K Soni ◽

Manisha Pattanaik

Keyword(s):

Simulation Study ◽

Common Source ◽

Amplifier Circuit ◽

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A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET

Journal of Computational Electronics ◽

10.1007/s10825-020-01497-3 ◽

2020 ◽

Vol 19 (3) ◽

pp. 1077-1084

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Double Gate ◽

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Simulation Study on Stability Aspect of Dual Metal Dual Dielectric Based TFET Architectures Against Temperature Variations

Springer Proceedings in Physics - The Physics of Semiconductor Devices ◽

10.1007/978-3-319-97604-4_100 ◽

2019 ◽

pp. 649-655

Author(s):

Upasana ◽

Rakhi Narang ◽

Manoj Saxena ◽

M. Gupta

Keyword(s):

Simulation Study ◽

Temperature Variations ◽

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Proposal of an Intrinsic-Source Broken-Gap Tunnel FET to Reduce Band-Tail Effects on Subthreshold Swing: A Simulation Study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2553086 ◽

2016 ◽

Vol 63 (6) ◽

pp. 2597-2602 ◽

Author(s):

Ankit Sharma ◽

Ahmed Kamal Reza ◽

Kaushik Roy

Keyword(s):

Simulation Study ◽

Subthreshold Swing ◽

Band Tail ◽

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Impact of Temperature Variations on Line Tunnel FET for Low Power Applications

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.4073 ◽

2015 ◽

Vol 12 (10) ◽

pp. 3009-3012

Author(s):

Kamal K. Jha ◽

Varun Sharma ◽

Manisha Pattanaik

Keyword(s):

Low Power ◽

Temperature Variations ◽

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Performance analysis and simulation study of a Sandwiched Barrier Tunnel FET

2012 International Conference on Communications, Devices and Intelligent Systems (CODIS) ◽

10.1109/codis.2012.6422232 ◽

2012 ◽

Author(s):

Partha Sarathi Gupta ◽

Madhuchhanda Brahma ◽

Jayita Das ◽

Debasree Burman ◽

Hafizur Rahaman ◽

...

Keyword(s):

Performance Analysis ◽

Simulation Study ◽

Performance Analysis And Simulation

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