Analytical Model of Radiation Induced or Single Event Latchup in CMOS Integrated Circuits

This paper describes the use of a pulsed laser for studying radiation-induced single-event transients in integrated circuits. The basic failure mechanisms and the fundamentals of the laser testing method are presented. Sample results are presented to illustrate the benefits of using a pulsed laser for studying single-event transients.

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Activation Energies of Thermal Annealing of Radiation-Induced Damage in n- and p-channels of CMOS Integrated Circuits, Part II

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1981.4335739 ◽

1981 ◽

Vol 28 (6) ◽

pp. 4407-4412 ◽

Cited By ~ 4

Author(s):

Vitaly Danchenko ◽

P. H. Fang ◽

Sidney S. Brashears

Keyword(s):

Integrated Circuits ◽

Thermal Annealing ◽

Activation Energies ◽

Cmos Integrated Circuits ◽

Radiation Induced

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Layout-based mitigation of single-event transient for monolithic 3D CMOS integrated circuits

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114210 ◽

2021 ◽

pp. 114210

Author(s):

Junjun Zhang ◽

Fanyu Liu ◽

Bo Li ◽

Yang Huang ◽

Can Yang ◽

...

Keyword(s):

Integrated Circuits ◽

Cmos Integrated Circuits ◽

Single Event ◽

Single Event Transient

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ТИРИСТОРНЫЙ ЭФФЕКТ В СВЧ ИС, ИЗГОТОВЛЕННЫХ ПО SIGE БИКМОП-ТЕХНОЛОГИЯМ

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.612.614 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 612-614

Author(s):

В.В. Елесина ◽

И.О. Метелкин

Keyword(s):

Integrated Circuits ◽

Extraction Procedure ◽

Compact Model ◽

Model Parameters ◽

Cad Systems ◽

Parameters Extraction ◽

Sige Bicmos ◽

Bicmos Integrated Circuits ◽

Basic Parameters ◽

Radiation Induced

Проведен анализ случаев возникновения тиристорного эффекта в СВЧ ИС, изготовленных по технологии SiGe БиКМОП, при воздействии ионизирующего излучения. Рассмотрены области СВЧ ИС, чувствительные к возникновению ТЭ, определены основные параметры тиристорных структур. Проведена апробация подхода к восстановлению параметров схемно-топологической радиационно-ориентированной модели тиристорной структуры для САПР. The paper analyzes ionizing radiation induced latchup in microwave SiGe BiCMOS integrated circuits (ICs). Critical parts of ICs sensitive to latchup have been identified and basic parameters of corresponding parasitic thyristor structures have been determined. An approach has been approved to the thyristor structure compact model parameters extraction procedure intended for use in CAD systems.

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