Erratum to “A Double-Modulation-Wave PWM for Dead-Time-Effect Elimination and Synchronous Rectification in SiC-Device-Based High-Switching-Frequency Converters”

2021 ◽  
Vol 36 (2) ◽  
pp. 2448-2448
Author(s):  
Qingzeng Yan ◽  
Xibo Yuan
Keyword(s):  
Dead Time ◽  
Time Effect ◽  
Switching Frequency ◽  
Frequency Converters ◽  
Modulation Wave ◽  
High Switching Frequency ◽  
Synchronous Rectification ◽  
Double Modulation

scholarly journals ZVS based on dead-time analysis of three port half bridge converters

2020 ◽  
Vol 11 (4) ◽  
pp. 1936
Author(s):  
Phuong Vu ◽  
Manh Linh Nguyen ◽  
Viet Phuong Pham
Keyword(s):  
Dead Time ◽  
Load Condition ◽  
Switching Frequency ◽  
Safe Operation ◽  
Zero Voltage Switching ◽  
Frequency Converters ◽  
High Switching Frequency ◽  
Power Loss Reduction ◽  
The Dead ◽  
Zero Voltage

In this research, the zero-voltage switching (ZVS) of the GaN FETs-based high frequency three-port half-bridge converter (TPHBC), which is capable of interfacing a renewable energy source, an energy storage and a load is discussed. To achieve ZVS, which plays a key role in power loss reduction of the high switching frequency converters, not only the parasitic elements but also the dead-time between two switches in one converter arm must be taken into account. This research gives a detail analysis about the influence of the dead-time on the ZVS condition. Based on the analysis, a minimum dead-time which guarantees not only the ZVS but also the safe operation of the converter is obtained. Simulations in various load condition of the TPHBC are carried out to verify the validity and effectiveness of the proposed method.

scholarly journals Insulation Life Span of Low-Voltage Electric Motors—A Survey

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1738
Author(s):  
Vanessa Neves Höpner ◽  
Volmir Eugênio Wilhelm
Keyword(s):  
Life Span ◽  
Electric Motor ◽  
Low Voltage ◽  
Frequency Converter ◽  
Rate Of Change ◽  
High Rate ◽  
Switching Frequency ◽  
Electric Motors ◽  
Frequency Converters ◽  
High Switching Frequency

The use of static frequency converters, which have a high switching frequency, generates voltage pulses with a high rate of change over time. In combination with cable and motor impedance, this generates repetitive overvoltage at the motor terminals, influencing the occurrence of partial discharges between conductors, causing degradation of the insulation of electric motors. Understanding the effects resulting from the frequency converter–electric motor interaction is essential for developing and implementing insulation systems with characteristics that support the most diverse applications, have an operating life under economically viable conditions, and promote energy efficiency. With this objective, a search was carried out in three recognized databases. Duplicate articles were eliminated, resulting in 1069 articles, which were systematically categorized and reviewed, resulting in 481 articles discussing the causes of degradation in the insulation of electric motors powered by frequency converters. A bibliographic portfolio was built and evaluated, with 230 articles that present results on the factors that can be used in estimating the life span of electric motor insulation. In this structure, the historical evolution of the collected information, the authors who conducted the most research on the theme, and the relevance of the knowledge presented in the works were considered.

Current controller design for high switching frequency converters

2016 ◽  
Author(s):  
Roghayeh Gavagsaz-Ghoachani ◽  
Matheepot Phattanasak ◽  
Majid Zandi ◽  
Jean-Philippe Martin ◽  
Babak Nahid-Mobarakeh ◽  
...  
Keyword(s):  
Controller Design ◽  
Switching Frequency ◽  
Frequency Converters ◽  
Current Controller ◽  
High Switching Frequency

scholarly journals Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6378
Author(s):  
Salvatore Musumeci ◽  
Fabio Mandrile ◽  
Vincenzo Barba ◽  
Marco Palma
Keyword(s):  
Motor Control ◽  
Motion Control ◽  
Dead Time ◽  
Low Voltage ◽  
Switching Frequency ◽  
Switching Converters ◽  
Power Switching ◽  
Pure Silicon ◽  
Silicon Devices ◽  
High Switching Frequency

The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.

scholarly journals Modeling and Compensation for Dead-Time Effect in High Power IGBT/IGCT Converters with SHE-PWM Modulation

Energies ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 4348 ◽  
Author(s):  
Jingling Cheng ◽  
Dongdong Chen ◽  
Guozhu Chen
Keyword(s):  
High Power ◽  
Pulse Width Modulation ◽  
Power Converters ◽  
Dead Time ◽  
Open Loop ◽  
Time Effect ◽  
Operating Conditions ◽  
Switching Frequency ◽  
Harmonic Elimination ◽  
The Dead

Research on applying selective harmonic elimination pulse width modulation (SHE-PWM) to high power converters has drawn tremendous interest, due to the advantages of low switching frequency and high output harmonic performance. In the fields of high power converters such as variable speed traction motor drives and static synchronous compensators (STATCOM), the adoption of high voltage but slow speed semiconductor devices, i.e., IGBT/IGCT, results in a longer dead time of several microseconds, which leads to a motor vibration in the former case or the distortion of grid current in the latter case. This paper analyzes in detail the mechanism of the dead-time effect on 3-level SHE-PWM with different operating conditions considered. For the first time, a general mathematical model describing the relationship between the dead time and harmonic distribution of SHE-PWM wave is established. Based on which an open-loop compensation method by inserting a margin time into the effective switching angles is proposed. Furthermore, a closed-loop controller that implements online adaptive adjustment of the margin time is designed in case of a variable frequency application. The effectiveness of the proposed method in different scenarios is verified through simulation results.

scholarly journals A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1146 ◽  
Author(s):  
Baochao Wang ◽  
Shili Dong ◽  
Shanlin Jiang ◽  
Chun He ◽  
Jianhui Hu ◽  
...  
Keyword(s):  
Comparative Study ◽  
Dead Time ◽  
High Electron Mobility Transistors ◽  
Buck Converter ◽  
Switching Frequency ◽  
High Electron ◽  
Switching Loss ◽  
Gan Hemt ◽  
Switching Losses ◽  
High Switching Frequency

The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

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