A 3-D Theoretical Model of Thermal Breakdown in Semiconductor Devices Under Multiple Pulses

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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Comparison of ultra high resolution immersion lens CFESEM and TEM for imaging of semiconductor devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176241 ◽

1990 ◽

Vol 48 (4) ◽

pp. 622-623

Author(s):

Terrence Reilly ◽

Al Pelillo ◽

Barbara Miner

Keyword(s):

High Resolution ◽

Sample Preparation ◽

Cross Sections ◽

Semiconductor Devices ◽

Ion Milling ◽

Observation Area ◽

Transmission Electron ◽

Milling Machines ◽

Resolution Imaging ◽

Electron Microscopes

The use of transmission electron microscopes (TEM) has proven to be very valuable in the observation of semiconductor devices. The need for high resolution imaging becomes more important as the devices become smaller and more complex. However, the sample preparation for TEM observation of semiconductor devices have generally proven to be complex and time consuming. The use of ion milling machines usually require a certain degree of expertise and allow a very limited viewing area. Recently, the use of an ultra high resolution "immersion lens" cold cathode field emission scanning electron microscope (CFESEM) has proven to be very useful in the observation of semiconductor devices. Particularly at low accelerating voltages where compositional contrast is increased. The Hitachi S-900 has provided comparable resolution to a 300kV TEM on semiconductor cross sections. Using the CFESEM to supplement work currently being done with high voltage TEMs provides many advantages: sample preparation time is greatly reduced and the observation area has also been increased to 7mm. The larger viewing area provides the operator a much greater area to search for a particular feature of interest. More samples can be imaged on the CFESEM, leaving the TEM for analyses requiring diffraction work and/or detecting the nature of the crystallinity.

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A theoretical model for understanding dentists' behavior in treating patients with AIDS

Journal of Dental Education ◽

10.1002/j.0022-0337.1991.55.11.tb02589.x ◽

1991 ◽

Vol 55 (11) ◽

pp. 708-716 ◽

Cited By ~ 1

Author(s):

MS Chen

Keyword(s):

Theoretical Model

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Introduction to Semiconductor Devices

10.1017/cbo9781139171373 ◽

2005 ◽

Cited By ~ 17

Author(s):

Kevin F. Brennan

Keyword(s):

Semiconductor Devices

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A Model for Analyzing Suicide Prevention

Crisis ◽

10.1027//0227-5910.21.2.80 ◽

2000 ◽

Vol 21 (2) ◽

pp. 80-89 ◽

Cited By ~ 3

Author(s):

Maila Upanne

Keyword(s):

Risk Factors ◽

Theoretical Model ◽

Protective Factors ◽

Suicide Prevention ◽

Suicide Risk ◽

Practical Work ◽

Individual Risk ◽

Self Assessment ◽

Prevention Project ◽

Individual Risk Factors

This study monitored the evolution of psychologists' (n = 31) conceptions of suicide prevention over the 9-year course of the National Suicide Prevention Project in Finland and assessed the feasibility of the theoretical model for analyzing suicide prevention developed in earlier studies [ Upanne, 1999a , b ]. The study was formulated as a retrospective self-assessment where participants compared their earlier descriptions of suicide prevention with their current views. The changes in conceptions were analyzed and interpreted using both the model and the explanations given by the subjects themselves. The analysis proved the model to be a useful framework for revealing the essential features of prevention. The results showed that the freely-formulated ideas on prevention were more comprehensive than those evolved in practical work. Compared to the earlier findings, the conceptions among the group had shifted toward emphasizing a curative approach and the significance of individual risk factors. In particular, greater priority was focused on the acute suicide risk phase as a preventive target. Nonetheless, the overall structure of prevention ideology remained comprehensive and multifactorial, stressing multistage influencing. Promotive aims (protective factors) also remained part of the prevention paradigm. Practical working experiences enhanced the psychologists' sense of the difficulties of suicide prevention as well as their criticism and feeling of powerlessness.

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