A theoretical model for calculating the effects of carrier heating with nonequilibrium hot phonons on semiconductor devices and the current-voltage relations

2018 ◽  
Vol 91 ◽  
pp. 335-343 ◽  
Author(s):  
Chin-Yi Tsai
Keyword(s):  
Theoretical Model ◽  
Semiconductor Devices ◽  
Carrier Heating ◽  
Hot Phonons ◽  
Current Voltage

On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes

2014 ◽  
Vol 1016 ◽  
pp. 521-525 ◽  
Author(s):  
V.V. Shurenkov
Keyword(s):  
Microwave Radiation ◽  
Main Part ◽  
Physical Mechanism ◽  
Semiconductor Devices ◽  
Microwave Devices ◽  
Electronic Systems ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Power Microwave ◽  
Forbidden Gap

The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.

A 3-D Theoretical Model of Thermal Breakdown in Semiconductor Devices Under Multiple Pulses

2019 ◽  
Vol 47 (11) ◽  
pp. 5180-5185
Author(s):  
Cunbo Zhang ◽  
Tao Yan ◽  
Zhiqiang Yang ◽  
Weitao Ren ◽  
Zhanping Zhu
Keyword(s):  
Theoretical Model ◽  
Semiconductor Devices ◽  
Thermal Breakdown ◽  
Multiple Pulses

scholarly journals Drift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices

2020 ◽  
Vol 19 (3) ◽  
pp. 1164-1174 ◽  
Author(s):  
Duy Hai Doan ◽  
Axel Fischer ◽  
Jürgen Fuhrmann ◽  
Annegret Glitzky ◽  
Matthias Liero
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Drift Diffusion ◽  
Current Voltage ◽  
Organic Semiconductor Devices ◽  
Diffusion Simulation

Dynamic I-V Curves Are Reliable Predictors of Naturalistic Pyramidal-Neuron Voltage Traces

2008 ◽  
Vol 99 (2) ◽  
pp. 656-666 ◽  
Author(s):  
Laurent Badel ◽  
Sandrine Lefort ◽  
Romain Brette ◽  
Carl C. H. Petersen ◽  
Wulfram Gerstner ◽  
...  
Keyword(s):  
Experimental Data ◽  
Theoretical Model ◽  
Neuronal Response ◽  
Pyramidal Cells ◽  
Analytical Models ◽  
Cell Populations ◽  
Cell Type ◽  
Response Properties ◽  
Current Voltage

Neuronal response properties are typically probed by intracellular measurements of current-voltage ( I-V) relationships during application of current or voltage steps. Here we demonstrate the measurement of a novel I-V curve measured while the neuron exhibits a fluctuating voltage and emits spikes. This dynamic I-V curve requires only a few tens of seconds of experimental time and so lends itself readily to the rapid classification of cell type, quantification of heterogeneities in cell populations, and generation of reduced analytical models. We apply this technique to layer-5 pyramidal cells and show that their dynamic I-V curve comprises linear and exponential components, providing experimental evidence for a recently proposed theoretical model. The approach also allows us to determine the change of neuronal response properties after a spike, millisecond by millisecond, so that postspike refractoriness of pyramidal cells can be quantified. Observations of I-V curves during and in absence of refractoriness are cast into a model that is used to predict both the subthreshold response and spiking activity of the neuron to novel stimuli. The predictions of the resulting model are in excellent agreement with experimental data and close to the intrinsic neuronal reproducibility to repeated stimuli.

New approach to pancake vortices interaction with nanosized defects in HTc superconductors

2014 ◽  
Vol 28 (16) ◽  
pp. 1450132 ◽  
Author(s):  
J. Sosnowski
Keyword(s):  
Experimental Data ◽  
Theoretical Model ◽  
Diffusion Equation ◽  
Energy Gain ◽  
New Approach ◽  
Magnetic Diffusion ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Pancake Vortices ◽  
Htc Superconductors

In this paper, an elaborated new theoretical model of the interaction of pancake-type vortices with nanosized defects is presented based on the energy gain analysis of the captured pancake vortices in nanosized defects in multilayered HTc superconductors. Current–voltage characteristics have been calculated in static and dynamic cases and compared with experimental data. Dynamical anomalies have been then predicted based on the solution of magnetic diffusion equation, which also well correspond to our previous experimental data.

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