Mathematical Support of On-board Radio Electronic Device for Aircraft Takeoff Parameters Control

Author(s):  
Saygid U. Uvaysov ◽  
Dang Nguyen Viet ◽  
Irina A. Florova ◽  
Olga V. Rychkova
Author(s):  
А.А. СМИРНОВ ◽  
А.М. КУДРЯВЦЕВ ◽  
С.Ю. ГАЛОВ

Рассматриваются вопросы моделирования радиоэлектронной обстановки с использованием среды имитационного моделирования AnyLogic. Для создания модели используется агентный подход. Имитационная модель содержит агенты трех классов: объект, радиоэлектронное средство, радиосеть. Моделируются перемещение объектов воинского формирования в соответствии с видом боевых действий и темпами движения, а также постановка радиопомех, приводящая к переходу радиосетей на запасные частоты. Реализация имитационной модели позволяет сформировать календарно-событийное представление радиоэлектронной обстановки, которое может быть использовано в качестве исходных данных для оценки ситуативной обстановки, в том числе с учетом применения радиоэлектронных средств субъектами данной ситуативной обстановки. The issues of modeling the radio-electronic environment using the AnyLogic simulation environment are considered. An agent approach is used to create the model. The simulation model contains agents of three classes: an object, an electronic device, and a radio network. The movement of objects of military units is modeled in accordance with the type of hostilities and the speed of troops movement, as well as the setting of radio interference, leading to the transition of radio networks to spare frequencies. The implementation of the simulation model allows creating a calendar-event representation of the radio-electronic environment, which can be used as source data for assessing the situational environment, including taking into account the use of electronic means by the subjects of this situational environment.


Author(s):  
S. U. Uvaysov ◽  
V. V. Chernoverskaya ◽  
An Kuan Dao ◽  
Van Tuan Nguyen

The article presents a new method for diagnosing the technical condition of radio-electronic components, combining the methods of thermal diagnostics with the technologies of artificial neural networks. The structure of the method is shown, and the composition of the functional blocks is determined. The implementation of the method is a symbiosis of technologies for mathematical and simulation modeling of the technical state of a radio-electronic device with its physical tests and research of characteristics. When developing the method, specialized software tools for design and circuit design were actively used, such as Altium Designer CAD, SolidWorks, NI Multisim, the FloTHERM PCB thermal analysis module, as well as the MATLAB mathematical modeling and calculation package. With the help of these tools, a number of studies were carried out, including sets of numerical values of the power of circuit elements and temperature indicators of the printing unit, both for the correct state of the device and in states with artificially introduced defects. They, in turn, became the basis of the database of electronic node failures. To implement diagnostic procedures and identify the technical condition, an artificial neural network based on selforganizing Kohonen maps was created, its structure, parameters and algorithms of functioning were determined. The diagnostic procedure is based on the analysis of information from the fault database and its comparison with experimental data obtained as a result of a physical experiment. The results of the study showed that the network automatically classifies the characteristic defects of electronic components using the algorithms embedded in it. The list of characteristic defects in the proposed diagnostic method is limited to a discrete set of the most common faults, because, as their number increases, the use of the self-organizing Kohonen network for automatic classification becomes much more complicated and ineffective in terms of performance and reliability of identification. Among the advantages of this technology, it should be noted that the Kohonen network has the ability to convert largedimensional input data into a two-dimensional array. So, the results are easy to visualize and convenient to use when generating reports and recommendations for subsequent decision-making about the possibility of using an electronic device.


Author(s):  
William Krakow

An electronic device has been constructed which manipulates the primary beam in the conventional transmission microscope to illuminate a specimen under a variety of virtual condenser aperture conditions. The device uses the existing tilt coils of the microscope, and modulates the D.C. signals to both x and y tilt directions simultaneously with various waveforms to produce Lissajous figures in the back-focal plane of the objective lens. Electron diffraction patterns can be recorded which reflect the manner in which the direct beam is tilted during exposure of a micrograph. The device has been utilized mainly for the hollow cone imaging mode where the device provides a microscope transfer function without zeros in all spatial directions and has produced high resolution images which are also free from the effect of chromatic aberration. A standard second condenser aperture is employed and the width of the cone annulus is readily controlled by defocusing the second condenser lens.


Author(s):  
Russell L. Steere ◽  
Eric F. Erbe ◽  
J. Michael Moseley

We have designed and built an electronic device which compares the resistance of a defined area of vacuum evaporated material with a variable resistor. When the two resistances are matched, the device automatically disconnects the primary side of the substrate transformer and stops further evaporation.This approach to controlled evaporation in conjunction with the modified guns and evaporation source permits reliably reproducible multiple Pt shadow films from a single Pt wrapped carbon point source. The reproducibility from consecutive C point sources is also reliable. Furthermore, the device we have developed permits us to select a predetermined resistance so that low contrast high-resolution shadows, heavy high contrast shadows, or any grade in between can be selected at will. The reproducibility and quality of results are demonstrated in Figures 1-4 which represent evaporations at various settings of the variable resistor.


Author(s):  
J. Hefter

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


2007 ◽  
Vol 38 (3) ◽  
pp. 245-258 ◽  
Author(s):  
Leonid L. Vasiliev ◽  
Andrei G. Kulakov ◽  
L. L. Vasiliev, Jr ◽  
Mikhail I. Rabetskii ◽  
A. A. Antukh

2017 ◽  
Vol 76 (20) ◽  
pp. 1777-1795
Author(s):  
S. V. Kolosov ◽  
А. А. Kuraev ◽  
I. Ye. Zaytseva
Keyword(s):  

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