Inductively-powered wireless solid-state drive (SSD) system with merged error correction of high-speed non-contact data links and NAND flash memory

2015 ◽  
Author(s):  
Atsutake Kosuge ◽  
Junki Hashiba ◽  
Toru Kawajiri ◽  
So Hasegawa ◽  
Tsunaaki Shidei ◽  
...  
Keyword(s):  
Solid State ◽  
Error Correction ◽  
Flash Memory ◽  
High Speed ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Solid State Drive ◽  
Data Links ◽  
Contact Data

A Novel Bit-Flipping LDPC Decoder for Solid-State Data Storage

2014 ◽  
Vol 513-517 ◽  
pp. 2094-2098 ◽  
Author(s):  
Wen Zhe Zhao ◽  
Kai Zhao ◽  
Qiu Bo Chen ◽  
Min Jie Lv ◽  
Zuo Xun Hou
Keyword(s):  
Solid State ◽  
Error Correction ◽  
Data Storage ◽  
Flash Memory ◽  
Message Passing ◽  
High Speed ◽  
Design Solution ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
State Data

This paper concerns the design of high-speed and low-cost LDPC code bit-flipping decoder. Due to its inferior error correction strength, bit-flipping decoding received very little attention compared with message-passing decoding. Nevertheless, emerging flash-based solid-state data storage systems inherently favor a hybrid bit-flipping/message-passing decoding strategy, due to the significant dynamics and variation of NAND flash memory raw storage reliability. Therefore, for the first time highly efficient silicon implementation of bit-flipping decoder becomes a practically relevant topic. To address the drawbacks caused by the global search operation in conventional bit-flipping decoding, this paper presents a novel bit-flipping decoder design. Decoding simulations and ASIC design show that the proposed design solution can achieve upto 80% higher decoding throughput and meanwhile consume upto 50% less silicon cost, while maintaining almost the same decoding error correction strength.

scholarly journals Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)

2012 ◽  
Vol 9 (8) ◽  
pp. 779-794 ◽  
Author(s):  
Ken Takeuchi ◽  
Teruyoshi Hatanaka ◽  
Shuhei Tanakamaru
Keyword(s):  
Solid State ◽  
Low Power ◽  
Flash Memory ◽  
High Speed ◽  
Nand Flash ◽  
Solid State Drives ◽  
Nand Flash Memory

scholarly journals Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 879
Author(s):  
Ruiquan He ◽  
Haihua Hu ◽  
Chunru Xiong ◽  
Guojun Han
Keyword(s):  
Neural Network ◽  
Error Correction ◽  
Error Detection ◽  
Flash Memory ◽  
Nand Flash ◽  
Data Reliability ◽  
Nand Flash Memory ◽  
Process Technology ◽  
Noise Mitigation ◽  
Memory Channel

The multilevel per cell technology and continued scaling down process technology significantly improves the storage density of NAND flash memory but also brings about a challenge in that data reliability degrades due to the serious noise. To ensure the data reliability, many noise mitigation technologies have been proposed. However, they only mitigate one of the noises of the NAND flash memory channel. In this paper, we consider all the main noises and present a novel neural network-assisted error correction (ANNAEC) scheme to increase the reliability of multi-level cell (MLC) NAND flash memory. To avoid using retention time as an input parameter of the neural network, we propose a relative log-likelihood ratio (LLR) to estimate the actual LLR. Then, we transform the bit detection into a clustering problem and propose to employ a neural network to learn the error characteristics of the NAND flash memory channel. Therefore, the trained neural network has optimized performances of bit error detection. Simulation results show that our proposed scheme can significantly improve the performance of the bit error detection and increase the endurance of NAND flash memory.

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