Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

2014 27th International Conference on VLSI Design and 2014 13th International Conference on Embedded Systems ◽

10.1109/vlsid.2014.76 ◽

2014 ◽

Author(s):

Neha Sharan ◽

Santanu Mahapatra

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Static Model ◽

Small Signal ◽

Double Gate ◽

Gate Oxide Thickness

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2184543 ◽

2012 ◽

Vol 59 (4) ◽

pp. 1002-1007 ◽

Cited By ~ 15

Author(s):

Srivatsava Jandhyala ◽

Rutwick Kashyap ◽

Costin Anghel ◽

Santanu Mahapatra

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Double Gate ◽

Charge Model ◽

Gate Oxide Thickness

A Short-Channel Common Double-Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2331191 ◽

2014 ◽

Vol 61 (8) ◽

pp. 2732-2737 ◽

Cited By ~ 11

Author(s):

Neha Sharan ◽

Santanu Mahapatra

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Double Gate ◽

Short Channel ◽

Gate Oxide Thickness ◽

Double Gate Mosfet

Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region

Solid-State Electronics ◽

10.1016/j.sse.2016.03.002 ◽

2016 ◽

Vol 120 ◽

pp. 19-24 ◽

Cited By ~ 3

Author(s):

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Analytical Model ◽

Gate Oxide ◽

Oxide Thickness ◽

Flat Band ◽

Double Gate ◽

Flat Band Voltage ◽

Subthreshold Region ◽

Gate Oxide Thickness ◽

Double Gate Mosfet

Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry

Electronics Letters ◽

10.1049/el.2012.1295 ◽

2012 ◽

Vol 48 (13) ◽

pp. 794 ◽

Cited By ~ 5

Author(s):

S. Jandhyala ◽

S. Mahapatra

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Double Gate ◽

Fully Depleted ◽

Gate Oxide Thickness ◽

Double Gate Mosfet ◽

Compact Models

Compact noise modelling for common double‐gate metal–oxide–semiconductor field‐effect transistor adapted to gate‐oxide‐thickness asymmetry

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2015.0128 ◽

2016 ◽

Vol 10 (1) ◽

pp. 62-67 ◽

Cited By ~ 2

Author(s):

Neha Sharan ◽

Santanu Mahapatra

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Oxide Thickness ◽

Effect Transistor

2-D potential model for short channel common double gate MOSFETs adapted to gate-oxide thickness symmetry

2016 IEEE Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER) ◽

10.1109/discover.2016.7806234 ◽

2016 ◽

Author(s):

Venkata Appa Rao Yempada ◽

Srivatsava Jandhyala

Keyword(s):

Potential Model ◽

Gate Oxide ◽

Oxide Thickness ◽

Double Gate ◽

Short Channel ◽

Gate Oxide Thickness

indDG: A new compact model for common double gate MOSFET adapted to gate oxide thickness asymmetry

2015 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) ◽

10.1109/conecct.2015.7383874 ◽

2015 ◽

Author(s):

Chethan Kumar ◽

Neha Sharan ◽

Santanu Mahapatra

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Compact Model ◽

Double Gate ◽

Gate Oxide Thickness ◽

Double Gate Mosfet

Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2262943 ◽

2013 ◽

Vol 60 (7) ◽

pp. 2419-2422 ◽

Cited By ~ 7

Author(s):

Neha Sharan ◽

Santanu Mahapatra

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Double Gate ◽

Static Charge ◽

Charge Model ◽

Gate Oxide Thickness

Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2028379 ◽

2009 ◽

Vol 56 (10) ◽

pp. 2297-2301 ◽

Cited By ~ 3

Author(s):

Sheng Chang ◽

Gaofeng Wang ◽

Qijun Huang ◽

Hao Wang

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Double Gate ◽

Analytic Model ◽

Gate Oxide Thickness

Subthreshold Swing for Top and Bottom Gate Oxide Thickness of Asymmetric Double Gate MOSFET

10.14257/astl.2013.37.07 ◽

2013 ◽

Author(s):

Hakkee Jung ◽

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Subthreshold Swing ◽

Double Gate ◽

Gate Oxide Thickness ◽

Double Gate Mosfet ◽

Bottom Gate