Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method

2014 ◽  
Author(s):  
Yunsang Shin ◽  
Wonil Chung ◽  
Yujin Seo ◽  
Choong-Ho Lee ◽  
Dong Kyun Sohn ◽  
...  
Keyword(s):  
Vacuum Annealing ◽  
Gate Stack

scholarly journals Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Moderate Temperature ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
X Ray ◽  
Thermal Stability Of

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

scholarly journals Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

2013 ◽  
Vol 114 (15) ◽  
pp. 154108 ◽  
Author(s):  
Varistha Chobpattana ◽  
Thomas E. Mates ◽  
William J. Mitchell ◽  
Jack Y. Zhang ◽  
Susanne Stemmer
Keyword(s):  
Surface Cleaning ◽  
Gate Stack ◽  
Cleaning Procedures

HRTEM Analysis of Magnetron Sputtered Ni4Al Thin Films

2015 ◽  
Vol 761 ◽  
pp. 504-509
Author(s):  
T. Joseph Sahaya Anand ◽  
Mohd Asyadi Azam ◽  
Sivaraos ◽  
Zolkepli Buang ◽  
Rajes K.M. Rajan ◽  
...  
Keyword(s):  
Isothermal Annealing ◽  
Vacuum Annealing ◽  
Nanocrystalline Structure ◽  
Al Alloy ◽  
Transmission Electron ◽  
Annealing Heat Treatment ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Grain Coalescence

The nanostructural characteristics of direct-current magnetron sputter-deposited Ni4Al alloy films were studied during in situ isothermal annealing in a transmission electron microscope (TEM). An expansion of the lattice by nearly 5% was observed for the synthesized films in their low-thickness and as-deposited state. The lattice size approaches the bulk value when the film thickness increases or after vacuum annealing heat-treatment. The Ni4Al films have a nanocrystalline structure in which the ordered L12 phase appears upon annealing at above 500°C. A grain coalescence trend was found for the Ni4Al films during the in situ annealing above 500°C. This can be the main reason for the abnormal grain growth of these films at these high temperatures.

Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing

2005 ◽  
Vol 86 (8) ◽  
pp. 082904 ◽  
Author(s):  
Kang-ill Seo ◽  
Paul C. McIntyre ◽  
Hyoungsub Kim ◽  
Krishna C. Saraswat
Keyword(s):  
Vacuum Annealing ◽  
Silicate Layer

In situ transport in alumina-based magnetic tunnel junctions during high-vacuum annealing

2006 ◽  
Vol 99 (8) ◽  
pp. 08K701 ◽  
Author(s):  
A. T. Hindmarch ◽  
G. I. R. Anderson ◽  
C. H. Marrows ◽  
B. J. Hickey
Keyword(s):  
Tunnel Junctions ◽  
Vacuum Annealing ◽  
High Vacuum ◽  
Magnetic Tunnel Junctions

Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM

2007 ◽  
Vol 47 (4-5) ◽  
pp. 657-659 ◽  
Author(s):  
A. Zenkevich ◽  
Yu. Lebedinskii ◽  
G. Scarel ◽  
M. Fanciulli ◽  
A. Baturin ◽  
...  
Keyword(s):  
Vacuum Annealing ◽  
Degradation Kinetics ◽  
Ex Situ ◽  
In Situ Xps ◽  
Kinetics Of

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K

Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

2014 ◽  
Vol 105 (9) ◽  
pp. 092101 ◽  
Author(s):  
Xu Yang ◽  
Sheng-Kai Wang ◽  
Xiong Zhang ◽  
Bing Sun ◽  
Wei Zhao ◽  
...  
Keyword(s):  
Gate Stack ◽  
Ozone Oxidation ◽  
Oxidation Method ◽  
Germanium Substrate
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