HRTEM Analysis of Magnetron Sputtered Ni4Al Thin Films

2015 ◽  
Vol 761 ◽  
pp. 504-509
Author(s):  
T. Joseph Sahaya Anand ◽  
Mohd Asyadi Azam ◽  
Sivaraos ◽  
Zolkepli Buang ◽  
Rajes K.M. Rajan ◽  
...  
Keyword(s):  
Isothermal Annealing ◽  
Vacuum Annealing ◽  
Nanocrystalline Structure ◽  
Al Alloy ◽  
Transmission Electron ◽  
Annealing Heat Treatment ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Grain Coalescence

The nanostructural characteristics of direct-current magnetron sputter-deposited Ni4Al alloy films were studied during in situ isothermal annealing in a transmission electron microscope (TEM). An expansion of the lattice by nearly 5% was observed for the synthesized films in their low-thickness and as-deposited state. The lattice size approaches the bulk value when the film thickness increases or after vacuum annealing heat-treatment. The Ni4Al films have a nanocrystalline structure in which the ordered L12 phase appears upon annealing at above 500°C. A grain coalescence trend was found for the Ni4Al films during the in situ annealing above 500°C. This can be the main reason for the abnormal grain growth of these films at these high temperatures.

Crystallization of Amorphous Silicon-Aluminum thin Films: IN-SITU Observation and Thermal Analysis.

1991 ◽  
Vol 237 ◽  
Author(s):  
Toyohiko J. Konno ◽  
Robert Sinclair
Keyword(s):  
Activation Energy ◽  
Amorphous Alloys ◽  
Amorphous Matrix ◽  
In Situ Observation ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Higher Temperature ◽  
Sputter Deposited

ABSTRACTThe crystallization of sputter-deposited Si/Al amorphous alloys was examined by transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). In-situ high-resolution TEM reveals the existence of an Al layer between the amorphous matrix and the growing crystalline phase. The activation energy for the growth is about 1.2eV, roughly corresponding to the activation energy of Si diffusion in Al. These two observations support the view that a crystallization mechanism, in which an Al buffer layer provides the shortest reaction path, is responsible for the reaction. The product microstructure exhibits secondary crystallization at a higher temperature.

Reactive phase formation in sputter-deposited Ni/Al multilayer thin films

1997 ◽  
Vol 12 (1) ◽  
pp. 133-146 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsen ◽  
G. Lucadamo
Keyword(s):  
Phase Formation ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Nucleation Kinetics ◽  
Scanning Calorimetry ◽  
Calorimetric Analysis ◽  
Transmission Electron ◽  
Nial Phase ◽  
Magnetron Sputter ◽  
Sputter Deposited

We have investigated reactive phase formation in magnetron sputter-deposited NiyAl multilayer films with a 1 : 3 molar ratio and various periodicities, L, ranging from 320 nm down to a codeposited film with zero effective periodicity. The films were studied by x-ray diffraction, differential scanning calorimetry, electrical resistance measurements, and transmission electron microscopy. We find that Ni and Al have reacted during deposition to form the B2 NiAl phase and an amorphous phase. The formation of these phases substantially reduces the driving force for subsequent reactions and explains why nucleation kinetics become important for these reactions. Depending on the periodicity, these reactions result in the formation of NiAl3 or Ni2Al9 followed by NiAl3. Detailed calorimetric analysis reveals differences in the nucleation and growth behavior of NiAl3 compared with other studies.

scholarly journals Unravelling the characteristics of Al-alloy corrosion at the atomic to nanometre scale by transmission electron microscopy

2020 ◽  
Vol 326 ◽  
pp. 01007
Author(s):  
Shravan K. Kairy ◽  
Nick Birbilis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Al Alloy ◽  
Second Phase ◽  
Clear Understanding ◽  
Transmission Electron ◽  
Second Phase Particles ◽  
Al Matrix

The localised corrosion associated with Mg2Si in the Al-matrix of an Al-Mg-Si alloy was studied in 0.1 M NaCl at pH 6 by quasi in-situ transmission electron microscopy. Herein, physical imaging of corrosion at the atomic to nanometre scale was performed. Phase transformation and subsequent chemical composition variations associated with the localised corrosion of Mg2Si were studied. It was observed that corrosion initiated upon Mg2Si, often preferentially at the interface with the Al-matrix, and propagated until Mg2Si was completely dealloyed by Mg-dissolution, resulting in an amorphous SiO-rich phase remnant. The SiO-rich remnant became electrochemically inert and did not initiate corrosion in the Al-matrix. This study provides a clear understanding on the localised corrosion of Al-alloys associated with Mg2Si. In addition, the methodology followed in this study can also be applied to understand the role of precipitates and second phase particles in the localised corrosion of Al-alloy systems.

In-Situ TEM Observation of Electromigration Damage by Surface or Interface Diffusion in Al and Al Alloy Films

1991 ◽  
Vol 225 ◽  
Author(s):  
C. Y. Chang ◽  
R. W. Vook
Keyword(s):  
Grain Size ◽  
Diffusion Mechanism ◽  
In Situ Tem ◽  
Al Alloy ◽  
Linear Temperature ◽  
Alloy Films ◽  
Interface Diffusion ◽  
Transmission Electron ◽  
Dc Current

ABSTRACTIn-situ transmission electron microscope (TEM) electromigration damage (EMD) tests were performed on pure Al films which were thermally evaporated onto oxidized silicon wafers under different deposition conditions. Three different aluminum alloy films, Al-2wt%Cu, Al-8wt%Cu, and Al-2wt%Cu-lwt%Si were also examined. TEM images were recorded photographically and by a video camcorder. The sample stripes were stressed by a high DC current density (≈1.5 MA/cm2). A linear temperature ramp (5°C/min) was supplied by an external, computer controlled heater. The morphology of EMD-induced voids was found to be strongly dependent on microstructure. In small grain size Al stripes, EMD occurred by the formation of void “fingers” which propagated in an almost random manner. In large grain size Al and Al alloy stripes, the EMD-elongated voids propagated approximately parallel to each other and along the field direction. They were preceded with clearly identifiable local thinning. The thinned regions often had crystallographic edges. Contrary to the commonly held belief that EMD occurs only by a grain boundary diffusion mechanism, the present study clearly shows that surface or interface diffusion was the dominant, latter stage EMD failure mode in large grain size films.

Characterization of Cu-Al alloy/SiO2 interface microstructure

2000 ◽  
Vol 615 ◽  
Author(s):  
Pei-I Wang ◽  
S. P. Murarka ◽  
G.-R. Yang ◽  
E. Barnat ◽  
T.-M. Lu ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Alloy Film ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
Adhesion Promoter ◽  
Adhesion Promoters ◽  
Barrier Formation ◽  
Transmission Electron ◽  
Before And After ◽  
Sputter Deposited

ABSTRACTCu-Al alloys have been recommended for application as the diffusion barriers/adhesion promoters for advanced copper based metallization schemes. This approach to barrier formation is to generate an ultra-thin interfacial layer through Cu alloying without significantly affecting the resistivity of Cu. In this paper the microstructure of the bilayers of Cu/Cu-5 at%Al and Cu-5 at%Al/Cu sputter deposited on SiO2 before and after thermal annealing is investigated by transmission electron microscopy (TEM). Interfacial layer is observed in both cases. The variation of the resistance of the Cu-Al alloy film is consistent with its microstructure. The x-ray diffraction (XRD) spectra of Cu-5 at%Al on SiO2 shows that the addition of Al into Cu intends to favor the Cu (111) texture. These results will be presented and discussed showing that films of Cu doped with Al appear to act as a suitable barrier and adhesion promoter between SiO2 and Cu.

The Effect of Deposition and Annealing Conditions on the Microstructure of Al-Cu and Al-Cu-Si Thin Films

1991 ◽  
Vol 229 ◽  
Author(s):  
M. Park ◽  
S. J. Krause ◽  
S. R. Wilson
Keyword(s):  
Single Phase ◽  
Alloy Composition ◽  
Phase Region ◽  
Annealed Condition ◽  
Two Phase ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Cu Thin Film

AbstractThe effect of deposition temperature and the addition of Si to sputter deposited Al-Cu thin-film microstructure was studied with transmission electron microscopy. Films were studied in the as-deposited and annealed condition. The effects of thermal treatment were studied with in-situ hot stage microscopy. Al2Cu (θ) precipitated at the grain boundaries and the sublayer interface. At higher deposition temperatures, with alloy composition in single phase region (Al-1.5 wt.%Cu), Al2Cu precipitated during cooldown. At lower temperatures, in the two phase Al-0 region, Al2Cu precipitated during deposition. The addition of Si caused formation of Si precipitates and retarded Al2Cu precipitation during deposition or cooldown.

Clarifying the Role of Mg2Si and Si in Localized Corrosion of Aluminum Alloys by Quasi In Situ Transmission Electron Microscopy

CORROSION ◽  
10.5006/3457 ◽  
2020 ◽  
Vol 76 (5) ◽  
pp. 464-475 ◽  
Author(s):  
Shravan K. Kairy ◽  
Nick Birbilis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Magnesium Silicide ◽  
Localized Corrosion ◽  
In Situ Tem ◽  
Al Alloy ◽  
Transmission Electron ◽  
Al Matrix

The role of magnesium silicide (Mg2Si) and silicon (Si) particles in the localized corrosion of aluminum (Al) alloys was investigated herein. Sub-micrometer-sized Mg2Si and Si particles were grown in the Al matrix of Al-Mg-Si and Al-Si alloys, respectively, and characterized by transmission electron microscopy (TEM). A quasi in situ TEM technique was used to study an identical location containing Mg2Si or Si particle in the Al matrix, prior to and following a period of immersion in 0.1 M NaCl at pH 6, 2, and 12. At pH 6 and 2, Mg2Si was initially “anodic,” preferentially dealloying via selective dissolution of Mg, resulting in the development of SiO-rich remnants that are electrochemically inert. The SiO-rich remnants at pH 2 physically detached from the Al matrix. Silicon particles were electrochemically inert at pH 6, while “cathodic” at pH 2, dissolving the Al matrix at their periphery. It was observed that copper (Cu) was redeposited on Si particles at pH 2. At pH 12, Mg2Si and Si were “cathodic” to the Al matrix. This study clarifies, and provides new insights into, the characteristics of Al alloy physical manifestation of corrosion associated with Mg2Si and Si at the nanoscale.

scholarly journals An in situ transmission electron microscope investigation into grain growth and ordering of sputter-deposited nanocrystalline Ni3Al thin films

2002 ◽  
Vol 17 (8) ◽  
pp. 2085-2094 ◽  
Author(s):  
H. P. Ng ◽  
A. H. W. Ngan
Keyword(s):  
Electron Microscope ◽  
Grain Growth ◽  
Transmission Electron Microscope ◽  
Growth Kinetics ◽  
Abnormal Grain Growth ◽  
Face Centered Cubic ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Grain Growth Kinetics

The grain growth kinetics and ordering behavior of direct-current magnetron sputter-deposited Ni75at.%Al25at.% alloy films were investigated using in situ isothermal annealing in a transmission electron microscope. Both normal and abnormal grain growth modes were observed. The normal grain growth kinetics under isothermal heating from 300 to 700 °C were found to comply with the Burke law d = K/dn−1, where d is grain size and K and n are constants with respect to time. The grain boundary mobility parameter K was found to obey an Arrehnius rate law with an apparent activation energy of 1.6 eV, and n was found to increase gradually from 5.2 at 300 °C to 8.7 at 700 °C. Abnormal grain growth occurred at 500 °C or higher, and grain coalescence was identified as an important operative mechanism. It was also observed that the initially as-deposited state of the films was crystalline with a disordered face-centered-cubic structure, but ordering into the equilibrium L12 intermetallic structure followed from annealing at temperatures above approximately 500 °C.

Microstructure of YBa2Cu3O7-δ/Ag Bilayers Grown In Situ on Step-Edge SrTiO3 Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
Z. H. Gong ◽  
J. K. Grepstad ◽  
S. Andersen ◽  
A. Bardal
Keyword(s):  
Film Growth ◽  
Ybco Film ◽  
Amorphous Material ◽  
Interfacial Microstructure ◽  
High Density ◽  
Step Edge ◽  
Transmission Electron ◽  
Lattice Images ◽  
Sputter Deposited

AbstractThe microstructure of YBa2Cu3O7-δ(YBCO)/Ag bilayers sputter deposited in situ on step-edge SrTiO3 (STO) substrates, was carefully examined by transmission electron microscopy (TEM). Considerable variation in the YBCO film growth morphology is found near steps, including film protrusions beyond the step edges and film growth on slopes. Lattice images recorded near steps unveil a high density of crystalline defects in the film. An increased density of defects is also found near the substrate interface for film grown on etched STO surface. However, these defects are confined to the interface region and do not propagate beyond the scale of the STO surface roughness. Comparison of TEM lattice images of YBCO(100)/Ag and YBCO(001)/Ag junctions from the same specimen unveils a distinct difference in the interfacial microstructure of those two junctions. Whereas the former exhibits a sharp crystalline interface, the latter typically features a thin ( ∼ 20 Å ) interfacial layer of amorphous material. The YBCO film morphology and the high density of defects in the step edge region uncovered in this study suggest that manufacture of reproducible and uniform YBCO/Ag (Au)/YBCO (SNS) Josephson junctions using the step-edge technique, will prove a difficult task.

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