Thermal Characterization and Design for a High Density GaN-Based Power Stage

2018 ◽  
Author(s):  
Edward A. Jones ◽  
Michael de Rooij
Keyword(s):  
Thermal Characterization ◽  
High Density ◽  
Power Stage

Thermal Characterization of High-Density Interconnects in the Form of Equivalent Thermal Conductivity

2009 ◽  
Author(s):  
Wataru Nakayama ◽  
Katsuhiro Koizumi ◽  
Takashi Fukue ◽  
Masaru Ishizuka ◽  
Tatsuya Nakajima ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Heat Conduction ◽  
Heat Flow ◽  
Numerical Solutions ◽  
Flow Direction ◽  
Thermal Characterization ◽  
High Density ◽  
Cooperative Effort ◽  
Equivalent Thermal Conductivity ◽  
Metal Pattern

The issue addressed in the present study is how to model wiring substrates to perform heat conduction analysis on moderate computational resource. Equivalent thermal conductivity is a convenient measure in thermal modeling. However, its notion needs re-examination where higher accuracy of heat conduction analysis is pursued. Proposed is a scheme where the indexed volumetric metal contents are used to estimate the equivalent conductivity of representative volume element (RVE). The index is designed to reflect the effect of metal pattern on heat flow through RVE. In order to illustrate the core concept we report the analysis performed on template models of high-density interconnect (HDI) substrates. The element of HDI contains copper in several forms; through-via, continuous plane, and cross wires. Five heat flow directions are assumed; two are linear and three are right-angled turn. From combinations of the metal pattern and the heat flow direction twenty five templates are created, then, they are subjected to detailed numerical analysis. The values of equivalent thermal conductivity derived from the numerical solutions reveal that the gross volumetric metal content is totally inadequate as a parameter of thermal characterization. The paper also outlines the overall organization of our analysis system which is being developed in an industry-academia cooperative effort under the auspices of JSME.

scholarly journals Crystalline Characteristics and Their Influence in the Mechanical Performance in Poly(ε-Caprolactone) / High Density Polyethylene Blends

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1874
Author(s):  
Enrique Blázquez-Blázquez ◽  
Ernesto Pérez ◽  
Vicente Lorenzo ◽  
María L. Cerrada
Keyword(s):  
Differential Scanning Calorimetry ◽  
High Density Polyethylene ◽  
Mechanical Performance ◽  
Thermal Characterization ◽  
High Density ◽  
Mechanical Behaviors ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Polyethylene Blends

Blends of poly(ε-caprolactone) (PCL) and high-density polyethylene (HDPE) have been prepared at different compositions in order to assess the effect of HDPE on gas transport and mechanical behaviors of PCL. Previous to this evaluation, a complete morphological, structural, and thermal characterization were performed using techniques, including SEM, contact angle, FTIR, differential scanning calorimetry, and X-ray diffraction with synchrotron radiation at small and wide angles. Low HDPE incorporations allow interactions to be established at interfaces in the amorphous regions and the enhancement of the mechanical performance. Consequently, the addition of a small amount of HDPE (ranging from 5 to 10 wt%) appears to be appropriate in certain bio-applications where a higher mechanical behavior is required.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

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