Process optimisation for the mechanised dry crystallisation of rice flake–milk pudding mix

2021 ◽  
Author(s):  
Deshmukh Gajanan Panditrao ◽  
Menon Rekha Ravindra ◽  
Naveen Jose ◽  
B Surendra Nath ◽  
Muniandy Sivaram
Keyword(s):  
Process Optimisation

Kinetic model of hybridoma cultures for the identification of rate limiting factors and process optimisation

1996 ◽  
Vol 42 (2-3) ◽  
pp. 197-205
Author(s):  
A. Lourenço da Silva ◽  
A. Marc ◽  
J.M. Engasser ◽  
J.L. Goergen
Keyword(s):  
Kinetic Model ◽  
Limiting Factors ◽  
Process Optimisation ◽  
Rate Limiting

Biolubricant synthesis using immobilised lipase: Process optimisation of trimethylolpropane oleate production

2011 ◽  
Vol 46 (12) ◽  
pp. 2225-2231 ◽  
Author(s):  
Cecilia Orellana Åkerman ◽  
Anna E.V. Hagström ◽  
M. Amin Mollaahmad ◽  
Stefan Karlsson ◽  
Rajni Hatti-Kaul
Keyword(s):  
Process Optimisation

Process Optimisation for 4H-SiC MOSFET Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1051-1054 ◽  
Author(s):  
Caroline Blanc ◽  
Dominique Tournier ◽  
Phillippe Godignon ◽  
D.J. Brink ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Field Effect ◽  
Oxidation Process ◽  
Gate Oxide ◽  
Process Optimisation ◽  
Field Effect Mobility ◽  
Oxide Formation ◽  
Step Procedure ◽  
P Type ◽  
Peak Value ◽  
Gas Precursor

We report on 4H-SiC MOSFET devices implemented on p-type <11-20>-oriented epitaxial layers, using a two-step procedure for gate oxide formation. First is a thin, dry, thermal SiO2 layer grown at 1050°C for 1 hour. Next, is a thick (50 nm) layer of complementary oxide deposited by PECVD using TEOS as gas precursor. With respect to the standard thermal oxidation process, this results in much improvement of the field effect mobility. For the best samples, we find a peak value in the range of 330 cm2/Vs while, on the full wafer, an average mobility of about 160 cm2/Vs is found. Up to now, this is one of the best results ever reported for 4H-SiC MOSFETs.

Sign in / Sign up

Export Citation Format

Share Document