An investigation into low-temperature nitrogen plasma environment effect on the content of polyphenols during withering in made Kenyan tea

ABSTRACTLow-temperature GaN buffer layers with smooth surfaces and high crystallinity could be prepared by a remote plasma enhanced metalorganic vapor deposition after the pretreatment of substrates with rf nitrogen plasma. Smooth AIN thin layer was formed on the (0001) sapphire substrate by the nitrogen plasma pretreatment for an hour. The AIN layer provided the nucleation sites for the subsequent buffer layer growth, thus highly preferred (0001) GaN buffer layers could be grown on the pretreated substrate. Formation of the AIN layer on sapphire and the surface smoothness were affected by pretreatment parameters such as exposure time, temperature, and rf power.

Download Full-text

Nitrogen plasma annealing for low temperature Ta2O5 films

Applied Physics Letters ◽

10.1063/1.120569 ◽

1998 ◽

Vol 72 (11) ◽

pp. 1308-1310 ◽

Cited By ~ 107

Author(s):

G. B. Alers ◽

R. M. Fleming ◽

Y. H. Wong ◽

B. Dennis ◽

A. Pinczuk ◽

...

Keyword(s):

Low Temperature ◽

Nitrogen Plasma ◽

Plasma Annealing

Download Full-text

Формирование сверхтвердых покрытий в процессе обработки низкотемпературной плазмой азота в открытой атмосфере пленок титана

Письма в журнал технической физики ◽

10.21883/pjtf.2021.09.50908.18701 ◽

2021 ◽

Vol 47 (9) ◽

pp. 44

Author(s):

М.Х. Гаджиев ◽

Р.М. Эмиров ◽

А.Э. Муслимов ◽

М.Г. Исмаилов ◽

В.М. Каневский

Keyword(s):

Low Temperature ◽

Plasma Treatment ◽

High Resistance ◽

Treatment Process ◽

Nitrogen Plasma ◽

Rutile Structure ◽

Open Atmosphere ◽

High Productivity ◽

Sapphire Substrates ◽

Superhard Coatings

Results of the formation of superhard coatings in the low-temperature nitrogen plasma treatment process in the open atmosphere of titanium films on sapphire substrates are given. It is shown that during plasma treatment a coating of nitrogen-containing TiO2 with rutile structure is formed with a double increase (in comparison with rutile TiO2) of microhardness (up to 27 GPa). The application of this coating leads to hardening of the surface of sapphire plates by 22-23%. High productivity and implementation of synthesis in an open atmosphere make it possible to consider the proposed procedure is promising for the production of superhard coatings with high resistance to oxygen.

Download Full-text

Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip

ECS Meeting Abstracts ◽

10.1149/ma2014-02/34/1753 ◽

2014 ◽

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Bonding Strength ◽

Nitrogen Plasma ◽

Plasma Activation ◽

Direct Wafer Bonding

Download Full-text

Low-Temperature Metalorganic Chemical Vapor Deposition of Gallium Nitride on (0001) Sapphire Substrates Using a Remote rf Nitrogen Plasma

MRS Proceedings ◽

10.1557/proc-449-95 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 5

Author(s):

Cheolsoo Sone ◽

Min Hong Kim ◽

Jae Hyung Yi ◽

Soun Ok Heur ◽

Euijoon Yoon

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nitrogen Plasma ◽

Structural Quality ◽

Organic Chemical ◽

Rf Power ◽

Sapphire Substrates ◽

Metal Organic

ABSTRACTWe report the low-temperature growth of GaN layers on (0001) sapphire substrates by a remote plasma enhanced metal-organic chemical vapor deposition in the temperature range of 500 - 800 $C. Effects of process parameters on the growth of GaN were studied. The structural quality of GaN improved as the growth temperature increased and the rf power decreased. Highly oriented GaN layers could be deposited at fairly low temperatures such as 500 $C under low rf power with low growth rate conditions.

Download Full-text