Relationship between the Mesoporous Intermediate Layer Structure and the Gas Permeation Property of an Amorphous Silica Membrane Synthesized by Counter Diffusion Chemical Vapor Deposition

2007 ◽  
Vol 0 (0) ◽  
pp. 071027221037001-??? ◽  
Author(s):  
Takayuki Nagano ◽  
Shinji Fujisaki ◽  
Koji Sato ◽  
Koji Hataya ◽  
Yuji Iwamoto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silica ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Layer Structure ◽  
Chemical Vapor ◽  
Gas Permeation ◽  
Silica Membrane ◽  
Counter Diffusion

scholarly journals Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition

Membranes ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Takayuki Nagano ◽  
Koji Sato ◽  
Koichi Kawahara
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Active Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Gas Permeation ◽  
Supply Source ◽  
Porous Support ◽  
Counter Diffusion

An amorphous silicon carbide (SiC) membrane was synthesized by counter-diffusion chemical vapor deposition (CDCVD) using silacyclobutane (SCB) at 788 K. The SiC membrane on a Ni-γ-alumina (Al2O3) α-coated Al2O3 porous support possessed a H2 permeance of 1.2 × 10−7 mol·m−2·s−1·Pa−1 and an excellent H2/CO2 selectivity of 2600 at 673 K. The intermittent action of H2 reaction gas supply and vacuum inside porous support was very effective to supply source gas inside mesoporous intermediate layer. A SiC active layer was formed inside the Ni-γ-Al2O3 intermediate layer. The thermal expansion coefficient mismatch between the SiC active layer and Ni-γ-Al2O3-coated α-Al2O3 porous support was eased by the low decomposition temperature of the SiC source and the membrane structure.

scholarly journals Gas permeation Property of Silicon Carbide Membrane Synthesized by Counter Diffusion Chemical Vapor Deposition

2019 ◽  
Author(s):  
Takayuki Nagano ◽  
Koji Sato ◽  
Koichi Kawahara
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Active Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Decomposition Temperature ◽  
Gas Permeation ◽  
Porous Support ◽  
Thermal Expansion Coefficients ◽  
Counter Diffusion

An amorphous silicon carbide (SiC) membrane with H2 permeance of 1.2E-7 mol･m-2･s-1･Pa-1 and excellent H2/CO2 selectivity of 2600 at 673 K was successfully synthesized on a Ni-gamma-alumina-coated alpha-alumina porous support by counter diffusion chemical vapor deposition (CDCVD) using silacycrobutane (SCB) at 788 K. The dominant permeation mechanism for He and H2 in the temperature range 323-673 K was activated diffusion. The SiC active layer was formed in Ni-gamma-Al2O3 intermediate layer. The thermal expansion coefficients mismatch between SiC active layer and Ni-gamma-Al2O3-coated alpha-Al2O3 porous support was eased by the low decomposition temperature of SiC source and membrane structure.

Performance under thermal and hydrothermal condition of amorphous silica membrane prepared by chemical vapor deposition

AIChE Journal ◽  
2009 ◽  
Vol 55 (8) ◽  
pp. 2197-2200 ◽  
Author(s):  
Kazuki Akamatsu ◽  
Masataka Nakane ◽  
Takashi Sugawara ◽  
Shin-ichi Nakao
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silica ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrothermal Condition ◽  
Silica Membrane
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