Gas permeation Property of Silicon Carbide Membrane Synthesized by Counter Diffusion Chemical Vapor Deposition
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An amorphous silicon carbide (SiC) membrane with H2 permeance of 1.2E-7 mol・m-2・s-1・Pa-1 and excellent H2/CO2 selectivity of 2600 at 673 K was successfully synthesized on a Ni-gamma-alumina-coated alpha-alumina porous support by counter diffusion chemical vapor deposition (CDCVD) using silacycrobutane (SCB) at 788 K. The dominant permeation mechanism for He and H2 in the temperature range 323-673 K was activated diffusion. The SiC active layer was formed in Ni-gamma-Al2O3 intermediate layer. The thermal expansion coefficients mismatch between SiC active layer and Ni-gamma-Al2O3-coated alpha-Al2O3 porous support was eased by the low decomposition temperature of SiC source and membrane structure.
2007 ◽
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pp. 071027221037001-???
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1999 ◽
Vol 61-62
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pp. 172-175
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2007 ◽
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pp. 1415-1426
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2014 ◽
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pp. 135-137
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1991 ◽
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pp. 231-234
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1992 ◽
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2012 ◽
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pp. 1361-1368
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1999 ◽
Vol 61-62
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pp. 176-178
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