High-Temperature Stability of Lead Zinc Niobate: In Situ X-Ray Diffraction

2010 ◽  
Vol 93 (11) ◽  
pp. 3902-3907 ◽  
Author(s):  
James V.> Shanahan ◽  
Erich H. Kisi ◽  
Jennifer S. Forrester ◽  
Heather J. Goodshaw ◽  
Jennifer S. Zobec ◽  
...  
2014 ◽  
Vol 118 (15) ◽  
pp. 8128-8133 ◽  
Author(s):  
Oleksandr O. Kurakevych ◽  
Yann Le Godec ◽  
Timothy A. Strobel ◽  
Duck Young Kim ◽  
Wilson A. Crichton ◽  
...  

1988 ◽  
pp. 351-357
Author(s):  
M. O. Eatough ◽  
T. L. Aselage ◽  
K. D. Keefer ◽  
D. S. Ginley ◽  
B. Morosin

2000 ◽  
Vol 655 ◽  
Author(s):  
Jung-Hyuk Koh ◽  
S.I. Khartsev ◽  
Alex Grishin ◽  
Vladimir Petrovsky

AbstractFor the first time AgTa0.38Nb0.62O3 (ATN) films have been grown on the La0.7Sr0.3CoO3 (LSCO)/LaAlO3 single crystal as well as onto Pt80Ir20 (PtIr) polycrystalline substrate. Comprehensive X-ray diffraction analyses reveal epitaxial quality of ATN and LSCO films on the LaAlO3(001) substrate, while ATN/PtIr films have been found to be (001) preferentially oriented. Dielectric spectroscopy performed for ATN films and bulk ceramics in a wide temperature range 77 to 420 K shows the structural monoclinic M1-to-monoclinic M2 phase transition occurs in films at the temperature 60 °C lower than in ceramics. The tracing of the ferroelectric hysteresis P-E loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields remnant polarization of 0.4 μC/cm2 @ 77 K. Weak frequency dispersion, high temperature stability of dielectric properties as well as low processing temperature of 550 °C make ATN films to be attractive for various applications.


2006 ◽  
Vol 70 (6) ◽  
pp. 467-472 ◽  
Author(s):  
Tomonori Nambu ◽  
Nobue Shimizu ◽  
Hisakazu Ezaki ◽  
Hiroshi Yukawa ◽  
Masahiko Morinaga ◽  
...  

2008 ◽  
Vol 452 (2) ◽  
pp. 446-450 ◽  
Author(s):  
Qiuguo Xiao ◽  
Ling Huang ◽  
Hui Ma ◽  
Xinhua Zhao

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