Crystalline and Electrical Properties of Ferroelectric Silver Niobate-tantalate thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Jung-Hyuk Koh ◽  
S.I. Khartsev ◽  
Alex Grishin ◽  
Vladimir Petrovsky
Keyword(s):  
Temperature Stability ◽  
Frequency Dispersion ◽  
Processing Temperature ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Ferroelectric State ◽  
X Ray ◽  
Ferroelectric Hysteresis ◽  
First Time

AbstractFor the first time AgTa0.38Nb0.62O3 (ATN) films have been grown on the La0.7Sr0.3CoO3 (LSCO)/LaAlO3 single crystal as well as onto Pt80Ir20 (PtIr) polycrystalline substrate. Comprehensive X-ray diffraction analyses reveal epitaxial quality of ATN and LSCO films on the LaAlO3(001) substrate, while ATN/PtIr films have been found to be (001) preferentially oriented. Dielectric spectroscopy performed for ATN films and bulk ceramics in a wide temperature range 77 to 420 K shows the structural monoclinic M1-to-monoclinic M2 phase transition occurs in films at the temperature 60 °C lower than in ceramics. The tracing of the ferroelectric hysteresis P-E loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields remnant polarization of 0.4 μC/cm2 @ 77 K. Weak frequency dispersion, high temperature stability of dielectric properties as well as low processing temperature of 550 °C make ATN films to be attractive for various applications.

High Temperature Stability of Superconducting YBa2CU3Ox as Characterized by X-ray Diffraction

1988 ◽  
pp. 351-357
Author(s):  
M. O. Eatough ◽  
T. L. Aselage ◽  
K. D. Keefer ◽  
D. S. Ginley ◽  
B. Morosin
Keyword(s):  
High Temperature ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray

High-temperature stability of epitaxial, non-isostructural Mo/NbN superlattices

2000 ◽  
Vol 15 (2) ◽  
pp. 554-559 ◽  
Author(s):  
C. Engström ◽  
A. Madan ◽  
J. Birch ◽  
M. Nastasi ◽  
L. Hultman ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ternary Phase ◽  
Vacuum Annealing ◽  
Temperature Stability ◽  
Mutual Solubility ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Superlattice Peak

The effect of 1000 °C vacuum annealing on the structure and hardness of epitaxial Mo/NbN superlattice thin films was studied. The intensity of superlattice satellite peaks, measured by x-ray diffraction, decreased during annealing while new peaks corresponding to a MoNbN ternary phase appeared. The results are consistent with the Mo–Nb–N phase diagram, which shows no mutual solubility between Mo, NbN, and MoNbN. Even after 3-h anneals and a loss of most of the superlattice peak intensity, the room-temperature hardness was the same as for as-deposited superlattices. The retained hardness suggests that a residual nanocomposite structure is retained even after the formation of the ternary structure.

High-Temperature Stability of Lead Zinc Niobate: In Situ X-Ray Diffraction

2010 ◽  
Vol 93 (11) ◽  
pp. 3902-3907 ◽  
Author(s):  
James V.> Shanahan ◽  
Erich H. Kisi ◽  
Jennifer S. Forrester ◽  
Heather J. Goodshaw ◽  
Jennifer S. Zobec ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Zinc Niobate ◽  
Lead Zinc

scholarly journals Структура и сегнетоэлектрические свойства гетероэпитаксиальных тонких пленок NaNbO-=SUB=-3-=/SUB=-, полученных методом RF-катодного распыления

2020 ◽  
Vol 46 (2) ◽  
pp. 15
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Н.В. Тер-Оганесян
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Oxygen Atmosphere ◽  
Cell Deformation ◽  
X Ray Diffraction ◽  
Cathode Sputtering ◽  
Ferroelectric State ◽  
X Ray ◽  
First Time

For the first time, thin films of NaNbO3 on a MgO(001) substrate, on which a SrRuO3 layer was previously deposited, were obtained by RF cathode sputtering in an oxygen atmosphere. According to x-ray diffraction analysis the films are single phase and single-crystalline. The lattice parameters in the tetragonal approximation for the NaNbO3 and SrRuO3 layers were: с(NaNbO3) = 0.3940(1) nm, a(NaNbO3) = 0.389(1) nm; с(SrRuO3) = 0.4004(1) nm, a(SrRuO3) = 0.392(3) nm. The unit cell deformation for NaNbO3 was ε33 = 0.007, ε11 = 0.002. Dielectric and piezoelectric measurements indicate that the films are in a ferroelectric state.

Synthesis of AnataseTiO2 Having High Specific Surface Area from a Gel Precursor

2011 ◽  
Vol 485 ◽  
pp. 279-282
Author(s):  
Keiko Fukushi ◽  
Sae Nakajima ◽  
Kazuyoshi Uematsu ◽  
Tadashi Ishigaki ◽  
Kenji Toda ◽  
...  
Keyword(s):  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
Temperature Stability ◽  
High Specific Surface Area ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Dialysis Treatment ◽  
X Ray ◽  
Transmission Electron

Anatase TiO2 having high temperature stability and specific surface area was synthesized using a gel precursor in very mild conditions. The precursor gel was obtained by dialysis treatment of Na16Ti10O28–HNO3 solution. The samples were characterized by X-ray diffraction analysis, transmission electron microscopy, Brunner–Emmett–Teller method for specific surface area measurements, and thermogravimetric analysis.

High Temperature Stability of Amorphous TaxCu1-x Diffusion Barriers on GaAs

1986 ◽  
Vol 77 ◽  
Author(s):  
J. E. Oh ◽  
J. J. Pouch ◽  
D. C. Ingram ◽  
S. A. Alterovitz ◽  
J. A. Woollam
Keyword(s):  
Elevated Temperatures ◽  
Alloy Composition ◽  
Vacuum Annealing ◽  
Temperature Stability ◽  
Diffusion Barriers ◽  
Maximum Temperature ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Coefficients

ABSTRACTThe x value of the most thermally stable co-sputtered TaxCu1-x alloy films are found to correlate with measured maximum temperature coefficients of resistance as a function of alloy composition. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealing and infrared rapid thermal annealing are made over a wide temperature range. Resistivity changes, X-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering measurements are performed to find the metallurgical stabilities of these materials at elevated temperatures.For high x values, the reaction temperature for TaxCu1-x, in contact with GaAs lies between 500 and 700°C. For Au in contact with TaxCu1-x the TaxCu1-x/GaAs reaction occurs at about 600°C. Amorphous Ta93Cu7 exhibits uniform mixing with surrounding elements, whereas Ta80Cu20 exhibits phase separation.

High Temperature Stability of Superconducting YBa2 Cu30x as Characterized by X-Ray Diffraction

1987 ◽  
Vol 31 ◽  
pp. 351-357
Author(s):  
M. O. Eatough ◽  
T. L. Aselage ◽  
K. D. Keefer ◽  
D. S. Ginley ◽  
B. Morosin
Keyword(s):  
Single Phase ◽  
Temperature Stability ◽  
Lattice Parameters ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Critical Temperatures ◽  
X Ray ◽  
Lower Oxygen ◽  
The Subject ◽  
Number Of Authors

The recent discovery of superconducting oxide ceramics with critical temperatures (Tc) near 100°K has stimulated research at an unprecedented pace. Single phase YBa2 Cu30x (x = 6.9), the subject of most of the interest, is an oxygen deficient 1:1:3 stacked perovskite derivative, (The structure of this materials has been described by a number of authors, many of whom are referenced by Jorgensen et al.) At room temperture it has an orthorhombic structure with lattice parameters near: a = 3.82Å, b = 3.88Å, and c - 11.68 Å. At lower oxygen values (x≤6.5) the structure is tetragonal with lattice parameters near: a = 3.86 and c = 11.80. It has been suggested that tetragonal YBa2 Cu30x is not superconducting. YBa2 Cu30x, regardless of oxygen content, is referred to here as 123.

Synthesis of Si-N-C Ceramic Composites by Pyrolysis of Polysilazane and Polycarbosilane

2012 ◽  
Vol 512-515 ◽  
pp. 306-309 ◽  
Author(s):  
X.Y. Bao ◽  
Song Li ◽  
Xiao Xia Tang ◽  
Yue Zhang
Keyword(s):  
Annealing Temperature ◽  
Temperature Stability ◽  
Ceramic Composites ◽  
Elemental Distribution ◽  
Oxide Ceramics ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Ceramic Yield ◽  
X Ray ◽  
Heat Treated

Non-oxide ceramics derived from organo-elemental precursors in the system Si-N-C has attracted much attention for its excellent properties. Typically, the Si-N-C ceramic shows homogeneous elemental distribution, better high-temperature stability and oxidation resistance which making them attractive for applying in various branches of technology. A novel amorphous ceramic is fabricated from precursors mixed by polysilazane (PSZ) and polycarbosilane (PCS). The Si-N-C ceramics (PSZ/PCS=2 (w/w)) are heat-treated between 1200°C and 1500°C in nitrogen to crystallization of microcrystalline α-Si3N4 and nanocrystalline SiC. The obtained Si-N-C ceramics are characterized by density, ceramic yield, porosity, X-ray diffraction and Scanning electron microscope to analyze the crystallization and microstructure. The experimental results indicate that the ratio of PSZ/PCS and the annealing temperature have a big influence on the crystallization behavior.

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