Characterization of Zinc Oxide Thin Film Using Atomic Force Microscopy and Optimized X-Ray Reflectivity by Genetic Algorithm

2011 ◽  
Vol 38 (1) ◽  
pp. 21-27
Author(s):  
G. Solookinejad ◽  
A.S.H. Rozatian ◽  
M.H. Habibi
2021 ◽  
Vol 900 ◽  
pp. 103-111
Author(s):  
Christelle Habis ◽  
Jean Zaraket ◽  
Michel Aillerie

Transparent conductive oxides are materials combining great transparency with high conductivity. In photovoltaic applications, they are developed under thin layer for the realization of upper electrodes of solar cells. Among transparent oxide materials, Zinc Oxide (ZnO) presents unique properties, starting with its first qualities to be abundant, low-cost and non-toxic oxide. Zinc Oxide thin film was deposited on rectangular glass substrate by magnetron sputtering. After an overview of the properties expected for good transparent conductive materials, the effect of distance from the center of the cell on the morphology of the film was investigated by Atomic Force Microscopy (AFM). The scanning was done on different area of the sample as function of the distance from the central position of the direct sputtering jet. As far as the distance increased, it has been noticed a quasi-linear increase in thickness of the ZnO deposited film and a change in the grain shape from spherical to pyramidal with an increase in the size of the particles. Controlling the sputtering distance allows the control of texture, thus of the Haze factor, the photo-generation of excitons, as well the optical transmission of the TCO layer and finally an improvement in the efficiency of the so-built photovoltaic cells.


2011 ◽  
Vol 11 (14) ◽  
pp. 2546-2553
Author(s):  
Amir Sayid Hassan Roz ◽  
Ghahraman Solookinej ◽  
Mohammad Hossein Habibi

2017 ◽  
Author(s):  
Uda Hashim ◽  
M. F. M. Fathil ◽  
M. K. Md Arshad ◽  
Subash C. B. Gopinath ◽  
M. N. A. Uda

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.


Vacuum ◽  
2021 ◽  
Vol 184 ◽  
pp. 109930
Author(s):  
Pallavi Sharma ◽  
Zeynel Guler ◽  
Nathan Jackson

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 101 ◽  
Author(s):  
Alejandra Rendón-Patiño ◽  
Jinan Niu ◽  
Antonio Doménech-Carbó ◽  
Hermenegildo García ◽  
Ana Primo

Polystyrene as a thin film on arbitrary substrates or pellets form defective graphene/graphitic films or powders that can be dispersed in water and organic solvents. The materials were characterized by visible absorption, Raman and X-ray photoelectron spectroscopy, electron and atomic force microscopy, and electrochemistry. Raman spectra of these materials showed the presence of the expected 2D, G, and D peaks at 2750, 1590, and 1350 cm−1, respectively. The relative intensity of the G versus the D peak was taken as a quantitative indicator of the density of defects in the G layer.


2006 ◽  
Vol 45 ◽  
pp. 679-684 ◽  
Author(s):  
Shu Yin ◽  
Rui Xing Li ◽  
Tsugio Sato

Novel superstructures of zinc oxide thin film with nano-rods and nano-screws were prepared via soft solution route without any polymer additives. The thin film of ZnO could be produced directly on the substrates. The yield of nano-rod and/or nano-screw was almost 100%. Small amount of nano-disk superstructure was also obtained. The superstructures of the film changed depending on the kind of treatment organic solvent such as methanol, butanol, i-propanol, hexane, etc. Monodispersed or symbiotic/multipod ZnO nanorods with hexagonal cross section or screw microstructure were successfully prepared.


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