Microstructure Evolution of In Situ
 Pulsed-Laser Crystallized Pb(Zr0.52
Ti0.48
)O3
 Thin Films

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

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Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

MRS Proceedings ◽

10.1557/proc-574-11 ◽

1999 ◽

Vol 574 ◽

Author(s):

D. Kumar ◽

K. G. Cho ◽

Zhang Chen ◽

V. Craciun ◽

P. H. Holloway ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Yttrium Oxide ◽

Lattice Mismatch ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

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Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

ECS Transactions ◽

10.1149/1.2357097 ◽

2019 ◽

Vol 3 (9) ◽

pp. 55-63 ◽

Cited By ~ 1

Author(s):

Antonello Tebano ◽

Carmela Aruta ◽

Pier Gianni Medaglia ◽

Giuseppe Balestrino ◽

Norberto G. Boggio ◽

...

Keyword(s):

Thin Films ◽

Electron Diffraction ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

High Energy ◽

Laser Deposition ◽

High Energy Electron ◽

High Quality ◽

Low Background

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In situ study of porous silicon thin films thermal oxidation by pulsed laser photoacoustics

Semiconductor Science and Technology ◽

10.1088/1361-6641/aacbe4 ◽

2018 ◽

Vol 33 (8) ◽

pp. 085001

Author(s):

Atzin David Ruíz Pérez ◽

M B de la Mora ◽

J L Benítez ◽

R Castañeda-Guzmán ◽

Jorge Alejandro Reyes-Esqueda ◽

...

Keyword(s):

Thin Films ◽

Porous Silicon ◽

Thermal Oxidation ◽

Pulsed Laser ◽

In Situ Study ◽

Silicon Thin Films

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Reduction of NiO to Ni in Nanocrystalline Composite NiO/Ce0.9Gd0.1O2-δ Porous Thin Films: Microstructure Evolution Through in Situ Impedance Spectroscopy

The Journal of Physical Chemistry C ◽

10.1021/jp403544a ◽

2013 ◽

Vol 117 (32) ◽

pp. 16297-16305 ◽

Cited By ~ 7

Author(s):

Guillaume Muller ◽

Rose-Noëlle Vannie ◽

Armelle Ringuede ◽

Christel Laberty-Robert

Keyword(s):

Thin Films ◽

Impedance Spectroscopy ◽

Microstructure Evolution ◽

Porous Thin Films ◽

Nanocrystalline Composite

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Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

MRS Proceedings ◽

10.1557/proc-0902-t10-25 ◽

2005 ◽

Vol 902 ◽

Author(s):

YauYau Tse ◽

P. S. Suherman ◽

T. J. Jackson ◽

I. P. Jones

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Strain Relaxation ◽

Pulsed Laser ◽

Phase Shifters ◽

Laser Deposition ◽

Ex Situ ◽

Misfit Dislocations ◽

Epitaxial Relationship

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

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