MODIFICATION OF BSF LAYER IN BIFACIAL SOLAR CELL VIA PHOTOSENSITIZATION OF MOLECULES NANOSTRUCTURE

2016 ◽  
Vol 78 (6-7) ◽  
Author(s):  
Nurul Aqidah Mohd Sinin ◽  
Mohd Adib Ibrahim ◽  
Suhaila Sepeai ◽  
Mohamad Yusof Sulaiman ◽  
Mohd Asri Mat Teridi ◽  
...  
Keyword(s):  
Solar Cell ◽  
Surface Passivation ◽  
Light Trapping ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Short Circuit Current ◽  
Back Surface ◽  
Dye Molecules ◽  
Interface Layers ◽  
Bifacial Solar Cell

Surface passivation is the most significant step to keep the recombination loss at a tolerable minimum and avoid an unacceptably large efficiency loss when moving towards thinner silicon material. In this study, the modification and photosensitization on back surface field (BSF) of bifacial solar cell was investigated by using dye molecules nanostructure namely DiO. The DiO dye molecules nanostructure was passivated on SiNW and BSF layers using spin-coating method. The energy gaps of DiO dye are 2.14 eV (DiO in chloroform), 2.13 eV (DiO on silicon nanowire (SiNW)) and 2.12 eV (DiO on BSF). The time resolved photoluminescence increased with the DiO dye coated on SiNW ( 14Ï„">  = 1.24 nm) and BSF layers ( 14Ï„">  = 0.93 nm) compared to DiO dye in chloroform ( 14Ï„">  = 0.54 nm). The light trapping inside the interface layers of DiO dye/silicon indicating a slow process of charge recombination before its reach equilibrium states, it is due to interface interaction bonding within boundary layers and dye molecules nanostructure. The short circuit current density also increased about 25% from 4.44 to 5.56 mA/cm2 when applying the dye molecules nanostructure on BSF of the cell. Collection of photo carrier lead of internal and external quantum efficiency improved about 19% and 25%, respectively, is mainly due to energy transported to the junction. The photo-generated electron on DiO dye lead to improvement in the exciton dissociation efficiency leading to increase in the electrical properties.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

scholarly journals Silicon Substrate Treated with Diluted NaOH Aqueous for Si/PEDOT: PSS Heterojunction Solar Cell with Performance Enhancement

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4659
Author(s):  
Tao Chen ◽  
Hao Guo ◽  
Leiming Yu ◽  
Tao Sun ◽  
Yu Yang
Keyword(s):  
Aqueous Solution ◽  
Solar Cell ◽  
Silicon Substrate ◽  
High Performance ◽  
Immersion Time ◽  
Performance Enhancement ◽  
Light Trapping ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density

Si/PEDOT: PSS solar cell is an important alternative for photovoltaic device due to its anticipated high theoretical efficiency and simple manufacturing process. In this study, processing silicon substrate with diluted NaOH aqueous solution was found to be an effective method for improving device performance, one that notably improves junction quality and light trapping ability. When immersed in diluted NaOH aqueous solution, the junction quality was improved according to the enlarged fill factor, reduced series resistance, and enhanced minor carrier lifetime. The diluted NaOH aqueous solution immersion etched the silicon surface and helped with the enhancement of light trapping ability, further improving the short-circuit current density. Although diluted NaOH aqueous solution immersion for bare silicon could improve the performance of devices, proper immersion time was needed. The influence of immersion time on device performances was investigated. The photovoltaic conversion efficiency easily increased from 10.01% to 12.05% when silicon substrate was immersed in diluted NaOH aqueous for 15 min. This study contributes to providing efficient and convenient methods for preparing high performance Si/PEDOT: PSS solar cells.

scholarly journals Surface Passivation Studies on n+pp+ Bifacial Solar Cell

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Suhaila Sepeai ◽  
M. Y. Sulaiman ◽  
Kamaruzzaman Sopian ◽  
Saleem H. Zaidi
Keyword(s):  
Solar Cell ◽  
Screen Printing ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Front Surface ◽  
Back Surface ◽  
Antireflective Coatings ◽  
Solar Cell Performance ◽  
Sandwiched Structure ◽  
Bifacial Solar Cell

Bifacial solar cell is a specially designed solar cell for the production of electricity from both sides of the solar cell. It is an active field of research to make photovoltaics (PV) more competitive by increasing its efficiency and lowering its costs. We developed an n+pp+ structure for the bifacial solar cell. The fabrication used phosphorus-oxy-trichloride (POCl3) diffusion to form the emitter and Al diffusion using conventional screen printing to produce the back surface field (BSF). The n+pp+ bifacial solar cell was a sandwiched structure of antireflective coatings on both sides, Argentum (Ag) as a front contact and Argentum/Aluminum (Ag/Al) as a back contact. This paper reports the solar cell performance with different surface passivation or antireflecting coatings (ARC). Silicon nitride (SiN) deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), thermally grown silicon dioxide (SiO2), PECVD-SiO2, and SiO2/SiN stack were used as ARC. The efficiency obtained for the best bifacial solar cell having SiN as the ARC is 8.32% for front surface illumination and 3.21% for back surface illumination.

scholarly journals Design of Silicon Nanowire Array for PEDOT:PSS-Silicon Nanowire-Based Hybrid Solar Cell

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3797 ◽  
Author(s):  
Syed Abdul Moiz ◽  
A. N. M. Alahmadi ◽  
Abdulah Jeza Aljohani
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Hybrid Solar Cell ◽  
Design Issues ◽  
Sinw Array

Among various photovoltaic devices, the poly 3, 4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS) and silicon nanowire (SiNW)-based hybrid solar cell is getting momentum for the next generation solar cell. Although, the power-conversion efficiency of the PEDOT:PSS–SiNW hybrid solar cell has already been reported above 13% by many researchers, it is still at a primitive stage and requires comprehensive research and developments. When SiNWs interact with conjugate polymer PEDOT:PSS, the various aspects of SiNW array are required to optimize for high efficiency hybrid solar cell. Therefore, the designing of silicon nanowire (SiNW) array is a crucial aspect for an efficient PEDOT:PSS–SiNW hybrid solar cell, where PEDOT:PSS plays a role as a conductor with an transparent optical window just-like as metal-semiconductor Schottky solar cell. This short review mainly focuses on the current research trends for the general, electrical, optical and photovoltaic design issues associated with SiNW array for PEDOT:PSS–SiNW hybrid solar cells. The foremost features including the morphology, surface traps, doping of SiNW, which limit the efficiency of the PEDOT:PSS–SiNW hybrid solar cell, will be addressed and reviewed. Finally, the SiNW design issues for boosting up the fill-factor, short-circuit current and open-circuit voltage will be highlighted and discussed.

scholarly journals Numerical study of a highly efficient light trapping nanostructure of perovskite solar cell on a textured silicon substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Alireza Tooghi ◽  
Davood Fathi ◽  
Mehdi Eskandari
Keyword(s):  
Solar Cell ◽  
Silicon Substrate ◽  
Numerical Study ◽  
Light Trapping ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Perovskite Solar Cell ◽  
Short Circuit Current Density ◽  
Planar Structure ◽  
Plasmonic Enhancement

Abstract In this paper, a nanostructured perovskite solar cell (PSC) on a textured silicon substrate is examined, and its performance is analyzed. First, its configuration and the simulated unit cell are discussed, and its fabrication method is explained. In this proposed structure, poly-dimethylsiloxane (PDMS) is used instead of glass. It is shown that the use of PDMS dramatically reduces the reflection from the cell surface. Furthermore, the light absorption is found to be greatly increased due to the light trapping and plasmonic enhancement of the electric field in the active layer. Then, three different structures, are compared with the main proposed structure in terms of absorption, considering the imperfect fabrication conditions and the characteristics of the built PSC. The findings show that in the worst fabrication conditions considered structure (FCCS), short-circuit current density (Jsc) is 22.28 mA/cm2, which is 27% higher than that of the planar structure with a value of 17.51 mA/cm2. As a result, the efficiencies of these FCCSs are significant as well. In the main proposed structure, the power conversion efficiency (PCE) is observed to be improved by 32%, from 13.86% for the planar structure to 18.29%.

Simulation of Symmetrically Doped Silicon Nanowire Solar Cells

2011 ◽  
Vol 1322 ◽  
Author(s):  
Felix Voigt ◽  
Thomas Stelzner ◽  
Silke H. Christiansen
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Short Circuit Current ◽  
Cylindrical Symmetry ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Back Surface ◽  
Cell Efficiency ◽  
P Type

ABSTRACTSilicon nanowire solar cells were simulated using the Silvaco TCAD software kit. For optimization of speed the simulations were performed in cylinder coordinates with cylindrical symmetry. Symmetric doping was assumed with a dopant density of 1018 cm-3 in the p-type core and inside the n-type shell. In the implementation a cathode contact was wrapped around the semiconductor nanorod and an anode was assumed at the bottom of the rod. Optimization of cell efficiency was performed with regard to the rod radius and the rod length. In both optimization processes clear maxima in efficiency were visible, resulting in an optimal radius of 66 nm with the pn junction at 43.5 nm and an optimal rod length of about 48 μm. The maximum of efficiency with respect to the rod radius is due to a decrease of short-circuit current density (Jsc) and an increase of open-circuit voltage (Uoc) with radius, while the maximum with respect to the rod length is explained by the combination of an increase of Jsc and a decrease of Uoc. Fill factors stay rather constant at values between 0.6 and 0.8. Further, the influence of a back surface field (BSF) layer was surveyed in simulations. Positioning the BSF next to the cathode contact considerably improved cell efficiency. In addition, simulations with a cathode contact on top of the nanowire structure were undertaken. No severe deterioration of cell performance with increasing radius was observed so far in this configuration. Hence, nanorods with much larger radii can be used for solar cells using this contact scheme. In comparison to simulations with wrapped cathode contacts, Jsc and Uoc and therefore efficiency is considerably improved.

scholarly journals Analysis of Back Surface Field (BSF) Performance in P-Type And N-Type Monocrystalline Silicon Wafer

2018 ◽  
Vol 43 ◽  
pp. 01006 ◽  
Author(s):  
Ferdiansjah ◽  
Faridah ◽  
Kelvian Tirtakusuma Mularso
Keyword(s):  
Solar Cell ◽  
Doping Level ◽  
Short Circuit ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Solar Cell Performance ◽  
P Type

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p+ or n+. This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm2, bulk doping level NB = 1.5×1016/cm3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×1018/cm3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×1017/cm3 to 1×1020/cm3 for each of the cell. Solar cell performance is tested under standard condition, with AM1.5G spectrum at 1000 W/m2. Its output is measured based on its open circuit voltage (Voc). short circuit current density (JSC), efficiency (η). and fill factor (FF). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest JSC which is 0.033 A/cm2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×1017cm-3.. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.

Extra-high short-circuit current for bifacial solar cells in sunny and dark–light conditions

2017 ◽  
Vol 53 (72) ◽  
pp. 10046-10049 ◽  
Author(s):  
Jialong Duan ◽  
Yanyan Duan ◽  
Yuanyuan Zhao ◽  
Benlin He ◽  
Qunwei Tang
Keyword(s):  
Solar Cell ◽  
Counter Electrode ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Simulated Sunlight ◽  
Light Conditions ◽  
Dark Light ◽  
Sunlight Irradiation ◽  
Current Densities ◽  
Bifacial Solar Cell

We present here a symmetrically structured bifacial solar cell tailored by two fluorescent photoanodes and a platinum/titanium/platinum counter electrode, yielding extra-high short-circuit current densities as high as 28.59 mA cm−2 and 119.9 μA cm−2 under simulated sunlight irradiation (100 mW cm−2, AM1.5) and dark–light conditions, respectively.

Effect of the Addition of Ti3+ into TiO2 Film on the Performance of Dye Sensitized Solar Cells

2007 ◽  
Vol 336-338 ◽  
pp. 2337-2339
Author(s):  
Jun Hui Xiang ◽  
Zhi Zhang ◽  
Fu Shi Zhang ◽  
Shoji Kaneko ◽  
Masayuki Okuya ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Tio2 Particle ◽  
Dye Molecules ◽  
Dye Sensitized ◽  
First Time ◽  
Sensitized Solar Cells

For the first time, it was found that low-valence additives could be employed to improve the conversion efficiency of dye sensitized solar cell. It was experimentally discovered that by forming nonstoichiometric compound, Ti3+ was located in the lattice of TiO2 film, generating surplus electrons within the film and affecting the morphology of TiO2 particle. The improvement of the conversion efficiency of the solar cell was mainly due to the increase of short circuit current along with the content of Ti3+. The surface of the TiO2 particle became more coarsely after TiCl3 added and the absorbed dye molecules was increased. It was another reason of the improvement of conversion efficiency.

scholarly journals Enhanced Conversion Efficiency of a-Si:H Thin-Film Solar Cell Using ZnO Nanorods

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1082
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Yu-Chao Hsu ◽  
Shou-Yi Kuo
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Light Trapping ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Optical Loss ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Zinc Oxide Nanorods ◽  
Surface Reflectivity

The surface reflectivity of a material will vary as light passes through interfaces with different refractive indices. Therefore, the optical loss and reflection of an optical-electronic component can be reduced by fabricating nanostructures on its surface. In the case of a solar cell, the presence of nanostructures can deliver many different advantages, such as decreasing the surface reflectivity, enhancing the light trapping, and increasing the efficiency of the carrier collection by providing a shorter diffusion distance for the photogenerated minority carriers. In this study, an approximately 50-nm thick seed layer was first prepared using spin coating. Zinc oxide nanorods (ZnO-NRs) were then grown using a chemical solution method (CSM). The ZnO-NRs were approximately 2 μm in height and 100 nm in diameter. After applying them to amorphous silicon (a-Si:H) solar cells, the short-circuit current density increased from 8.03 to 9.24 mA/cm2, and the photovoltaic conversion efficiency increased by 11.24%.

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