Control of Thin Film Growth in Chemical Vapor Deposition Manufacturing Systems: A Feasibility Study

2002 ◽  
Vol 124 (3) ◽  
pp. 715-724 ◽  
Author(s):  
Wilson K. S. Chiu ◽  
Yogesh Jaluria ◽  
Nick G. Glumac
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Design Space ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Operating Conditions ◽  
Design And Optimization ◽  
Wide Range ◽  
Computer Aided

A study is carried out to design and optimize Chemical Vapor Deposition (CVD) systems for material fabrication. Design and optimization of the CVD process is necessary to satisfying strong global demand and ever increasing quality requirements for thin film production. Advantages of computer aided optimization include high design turnaround time, flexibility to explore a larger design space and the development and adaptation of automation techniques for design and optimization. A CVD reactor consisting of a vertical impinging jet at atmospheric pressure, for growing titanium nitride films, is studied for thin film deposition. Numerical modeling and simulation are used to determine the rate of deposition and film uniformity over a wide range of design variables and operating conditions. These results are used for system design and optimization. The optimization procedure employs an objective function characterizing film quality, productivity and operational costs based on reactor gas flow rate, susceptor temperature and precursor concentration. Parameter space mappings are used to determine the design space, while a minimization algorithm, such as the steepest descent method, is used to determine optimal operating conditions for the system. The main features of computer aided design and optimization, using these techniques, are discussed in detail.

Optimization of Chemical Vapor Deposition Process

2006 ◽  
Author(s):  
Pradeep George ◽  
Hae Chang Gea ◽  
Yogesh Jaluria
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Response Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Transport Processes ◽  
Operating Conditions ◽  
Design Parameters ◽  
Large Area

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

Peculiarities of thin film deposition by means of reactive impulse plasma assisted chemical vapor deposition (RIPACVD) method

2004 ◽  
Vol 459 (1-2) ◽  
pp. 160-164 ◽  
Author(s):  
Aleksander Werbowy ◽  
Andrzej Olszyna ◽  
Krzysztof Zdunek ◽  
Aleksandra Sokołowska ◽  
Jan Szmidt ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition

A Numerical and Experimental Study on the Fabrication GaN Films by Chemical Vapor Deposition

2019 ◽  
Vol 142 (1) ◽  
Author(s):  
Sun Wong ◽  
Yogesh Jaluria
Keyword(s):  
Chemical Vapor Deposition ◽  
Computational Model ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Reactor Design ◽  
Film Deposition ◽  
Operating Conditions ◽  
Chamber Pressure ◽  
Organic Chemical

Abstract Computational modeling and simulation are employed to study a rotating susceptor vertical impinging chemical vapor deposition (CVD) reactor to predict GaN film deposition. Many metal-organic chemical vapor deposition reactor manufacturers use prior experience to design and fabricate CVD reactors without a fundamental basis for the process and information on the optimal conditions for the deposition. Through trial and error, they fine tune the gas flow parameters, heater temperatures, chamber pressure, and concentration of species gases for optimal growth. However, expensive raw precursor gas and time are wasted through this method. A computational model is an important step in the CVD reactor design and GaN growth prediction. It can be used to model and optimize the reactor to yield favorable operating conditions. In this paper, a simple geometry consisting of a rotating susceptor and flow guide is considered. The focus is on gallium nitride (GaN) thin films. The study shows how the computational model can benefit reactor design. It also presents comparisons between model prediction results and experimental data from a physical, practical, system. Commercially available software is used, with appropriate modifications, and the results obtained are discussed in detail.

scholarly journals Apparatus for Characterizing Gas-Phase Chemical Precursor Delivery for Thin Film Deposition Processes

2019 ◽  
Vol 124 ◽  
Author(s):  
James E. Maslar ◽  
William A. Kimes ◽  
Brent A. Sperling
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Volume ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optical Measurements ◽  
Deposition Processes

Thin film vapor deposition processes, e.g., chemical vapor deposition, are widely used in high-volume manufacturing of electronic and optoelectronic devices. Ensuring desired film properties and maximizing process yields require control of the chemical precursor flux to the deposition surface. However, achieving the desired control can be difficult due to numerous factors, including delivery system design, ampoule configuration, and precursor properties. This report describes an apparatus designed to investigate such factors. The apparatus simulates a single precursor delivery line, e.g., in a chemical vapor deposition tool, with flow control, pressure monitoring, and a precursor-containing ampoule. It also incorporates an optical flow cell downstream of the ampoule to permit optical measurements of precursor density in the gas stream. From such measurements, the precursor flow rate can be determined, and, for selected conditions, the precursor partial pressure in the headspace can be estimated. These capabilities permit this apparatus to be used for investigating a variety of factors that affect delivery processes. The methods of determining the pressure to (1) calculate the precursor flow rate and (2) estimate the headspace pressure are discussed, as are some of the errors associated with these methods. While this apparatus can be used under a variety of conditions and configurations relevant to deposition processes, the emphasis here is on low-volatility precursors that are delivered at total pressures less than about 13 kPa downstream of the ampoule. An important goal of this work is to provide data that could facilitate both deposition process optimization and ampoule design refinement.

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