Study of the Effect of Luminescence Down-Shifting on GaAs Solar Cells With Several Optical Windows Layers

2013 ◽  
Vol 136 (1) ◽  
Author(s):  
Mahfoud Abderrezek ◽  
Mohamed Fathi ◽  
Farid Djahli ◽  
Mohammed Ayad
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Theoretical Study ◽  
Organic Dyes ◽  
Short Circuit ◽  
Power Conversion ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Optically Active ◽  
Standard Spectrum

Luminescence down shifting (LDS) is an elegant approach used to improve the efficiency of single solar cells, in this approach, the photovoltaic (PV) glass material is replaced with a thin layer of polymer polymethyl methacrylate (PMMA) doped with optically active organic dyes. In this paper, we present a theoretical study. To assess the improvements introduced by LDS on an n-i-p-GaAs solar cells structure formed by diverse types of windows layers (Al0.8Ga0.2As, Al0.52In0.48P, and Ga0.5In0.5P). The performance of the solar cell is investigated as a function of organic dyes. It has been shown that the gain in power conversion efficiency attains values up to 5.79, 8.15, and 8.37% with Al0.8Ga0.2As, Al0.52In0.48P, and Ga0.5In0.5P in the standard spectrum AM1.5G, moreover, they increase the short circuit current density.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS

2019 ◽  
Vol 821 ◽  
pp. 407-413 ◽  
Author(s):  
Mohamed Orabi Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Collection Efficiency ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Bandgap Energy ◽  
Single Junction

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

scholarly journals Donor-π-Conjugated Spacer-Acceptor Dye-Sensitized Solid-State Solar Cell Using CuI as the Hole Collector

2019 ◽  
Vol 2019 ◽  
pp. 1-5
Author(s):  
D. N. Liyanage ◽  
K. D. M. S. P. K. Kumarasinghe ◽  
G. R. A. Kumara ◽  
A. C. A. Jayasundera ◽  
K. Tennakone ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Solid State ◽  
Short Circuit ◽  
Electrical Power ◽  
Short Circuit Current ◽  
Liquid Electrolyte ◽  
Short Circuit Current Density ◽  
Dye Sensitized ◽  
Type Semiconductor

Dye-sensitized solid-state solar cells (DSSCs) replacing the liquid electrolyte with a p-type semiconductor have been extensively examined to solve the practical problems associated with wet-type solar cells. Here, we report the fabrication of a solid-state solar cell using copper iodide (CuI) as the hole conductor and alkyl-functionalized carbazole dye (MK-2) as the sensitizer. A DSSC sensitized with MK-2 showed a solar-to-electrical power conversion efficiency of 3.33% with a Voc of 496 mV and a Jsc of 16.14 mA cm-2 under AM 1.5 simulated sunlight. The long alkyl chains act as a barrier for charge recombination, and the strong accepting and donating abilities of the cyanoacrylic and carbazole groups, respectively, enhance the absorption of light at a longer wavelength, increasing the short-circuit current density. The efficiency recorded in this work is higher than similar DSSCs based on other hole collectors.

Preparation of the Three Main Layers of CdS/CdTe Thin Film Solar Cells Using a Single Vacuum System

2011 ◽  
Vol 378-379 ◽  
pp. 601-605 ◽  
Author(s):  
Saleh N. Alamri ◽  
M. S. Benghanem ◽  
A. A. Joraid
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Fused Silica ◽  
Vacuum System ◽  
Cdte Thin Film

This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.

scholarly journals Novel Photonic Crystal Based Polycrystalline CdTe/Silicon Solar Cells

2020 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Photonic Crystal ◽  
Conversion Efficiency ◽  
Current Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation

2015 ◽  
Vol 761 ◽  
pp. 341-346 ◽  
Author(s):  
Ahmad Aizan Zulkefle ◽  
Maslan Zainon ◽  
Zaihasraf Zakaria ◽  
Mohd Ariff Mat Hanafiah ◽  
Nurul Huda Abdul Razak ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Cell Modeling ◽  
Modeling Software

This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better performance compared to Ge solar cell. The efficiency of 9.74% (VOC = 0.48V, JSC = 27.86mA/cm2, FF =0.73) is achieved with Si0.1Ge0.9 layer of 0.1μm in thickness whilst 2.73% (VOC = 0.20V, JSC = 27.31mA/cm2, FF =0.50) efficiency is obtained from Ge solar cell.

Characteristics of Global Solar Radiation Monitor Utilizing Solar Cells

2011 ◽  
Vol 134 (1) ◽  
Author(s):  
A. Ibrahim ◽  
M. R. I. Ramadan
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Solar Radiation ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Global Solar Radiation ◽  
Short Circuit Current Density ◽  
Electric Power Supply ◽  
Radiation Monitor ◽  
Complete Test

This brief note examines the characteristics of solar cells from the standpoint of developing a global solar radiation monitor. The study is performed using a simplified photovoltaic test monitor manufactured, a single crystal p-type czochraliski (CZ) silicon solar cell of the construction n+pp++ passivated emitter solar cell coupled to a fluke 73 digital multimeter. The short circuit current density (Jsc) is examined during a complete test day from 8:40 AM to 7:40 PM. Subsequently, the test monitor is used for checking the accuracy of transfer operations of solar radiation. The results obtained by the test monitor utilizing solar cells are good due to: (a) it is simple in construction, (b) it exhibits a good response to all solar radiation variations, and (c) it works without an electric power supply.

scholarly journals Improved conversion efficiency of 10% for solid-state dye-sensitized solar cells utilizing P-type semiconducting CuI and multi-dye consisting of novel porphyrin dimer and organic dyes

2018 ◽  
Vol 6 (45) ◽  
pp. 22508-22512 ◽  
Author(s):  
Naohiko Kato ◽  
Shinya Moribe ◽  
Masahito Shiozawa ◽  
Ryo Suzuki ◽  
Kazuo Higuchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Organic Dyes ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Dye Sensitized ◽  
P Type ◽  
Sensitized Solar Cells

To realize highly efficient solid-state dye-sensitized solar cells (SDSCs), the absorption range of the dye should be extended to the near-IR range to increase short-circuit current density (Jsc); a high Jsc in turn requires a highly conductive p-type semiconductor.

Enhanced Performance of Dye Sensitized Solar Cell by the Novel Composite TiO2/POEM Photoanodes

2012 ◽  
Vol 1442 ◽  
Author(s):  
Chung-Te Liu ◽  
Ying-Chiao Wang ◽  
Rui-Xuan Dong ◽  
Kuo-Chuan Ho ◽  
Jiang-Jen Lin
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Power Conversion ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Dye Sensitized Solar Cell ◽  
The Novel ◽  
Dye Sensitized ◽  
Polymer Dispersant ◽  
High Roughness

ABSTRACTA novel polymer dispersant, poly(oxyethylene)-segment imide (POEM) in the structure was incorporated in the nanocrystalline TiO2 film as the electrode. The uses of the dispersants could disperse TiO2 by decreasing the van der waals force among the nanoparticles, observed by TEM. The resultant TiO2/POEM film as the photoanode rendered the dye-sensitized solar cell (DSSC) with enhanced performance. By comparing to the traditional photoanode composing of polyethylene glycol (PEG) dispersed TiO2, the POEM dispersed TiO2 provided large surface area and high roughness in the dye adsorbed film. Furthermore, the fabricated TiO2/POEM photoanode has a better light-scattering property which contributes to the improvement for the short-circuit current density (Jsc) and the power-conversion efficiency (_) of the DSSC to be 19.1 mA cm-2 and 8.7%, respectively. The performance is superior to 13.2 mA cm-2 and 7.34% for a DSSC with the photoanode containing TiO2/PEG.

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