scholarly journals Nonlinear Electro-Thermal Monte Carlo Device Simulation

2019 ◽  
Vol 142 (2) ◽  
Author(s):  
Ky Merrill ◽  
Marco Saraniti
Keyword(s):  
Monte Carlo ◽  
Boundary Conditions ◽  
Thermal Characterization ◽  
High Electron Mobility Transistor ◽  
Energy Balance Equation ◽  
High Electron ◽  
Convective Boundary ◽  
Element Analysis ◽  
Kirchhoff Transformation

Abstract A model of self-heating is incorporated into a cellular Monte Carlo (CMC) particle device simulator. This is done through the solution of an energy balance equation (EBE) for phonons, which self-consistently couples charge and heat transport in the simulation. First, several tests are performed to verify the applicability and accuracy of the proposed nonlinear iterative solver in the presence of convective boundary conditions, as compared to a finite element analysis (FEA) solver as well as using the Kirchhoff Transformation. Finally, a fully coupled electro-thermal characterization of a GaN/AlGaN high electron mobility transistor (HEMT) is performed, and the effects of nonideal interfaces and boundary conditions are studied.

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

2020 ◽  
Vol 257 (4) ◽  
pp. 1900589 ◽  
Author(s):  
Tadatoshi Ito ◽  
Ryota Sakamoto ◽  
Tatsuya Isono ◽  
Yongzhao Yao ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

2016 ◽  
Vol 34 (4) ◽  
pp. 845-850 ◽  
Author(s):  
Adam Szyszka ◽  
Michał Obłąk ◽  
Tomasz Szymański ◽  
Mateusz Wośko ◽  
Wojciech Dawidowski ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Tandem Solar Cell ◽  
Quantitative Characterization ◽  
High Electron Mobility ◽  
Scanning Capacitance Microscopy ◽  
Transistor Fabrication ◽  
Microscopy Characterization

AbstractThe applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

2013 ◽  
Vol 529 ◽  
pp. 217-221 ◽  
Author(s):  
Ching-Hsiang Chan ◽  
Ching-Hwa Ho ◽  
Ming-Kai Chen ◽  
Yu-Shyan Lin ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Compressive Strain ◽  
High Electron Mobility Transistor ◽  
Optical Characterization ◽  
High Electron ◽  
High Electron Mobility
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