NEGF Quantum Simulation of Field Emission Devices

2011 ◽  
Author(s):  
T. D. Musho ◽  
S. M. Claiborne ◽  
D. G. Walker
Keyword(s):  
Band Gap ◽  
Field Emission ◽  
Electronic Devices ◽  
Wide Band ◽  
Point Of View ◽  
Superior Performance ◽  
Wide Band Gap ◽  
Quantum Point ◽  
Field Emission Devices ◽  
Non Equilibrium Green’S Function

Recent studies of wide band-gap diamond field emission devices have realized superior performance and lifetime. However, theoretical studies using standard Fowler-Nordheim (FN) theory do not fully capture the physics of diamond semiconductor emitters as a result of the fitting parameters inherent to the FN approximation. The following research computationally models wide band-gap field emission devices from a quantum point of view, using a novel non-equilibrium Green’s function (NEGF) approach previously applied to modeling solid-state electronic devices. Findings from this research confirm non-linearities in the FN curve and provide alternative explanations to discrepancies between standard FN theory.

Wide band gap materials for field emission devices

1997 ◽  
Vol 15 (3) ◽  
pp. 1733-1738 ◽  
Author(s):  
V. V. Zhirnov ◽  
G. J. Wojak ◽  
W. B. Choi ◽  
J. J. Cuomo ◽  
J. J. Hren
Keyword(s):  
Band Gap ◽  
Field Emission ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Emission Devices

Electron field emission from wide band-gap semiconductors (GaN)

2009 ◽  
Author(s):  
V. Litovchenko ◽  
A. Grygoriev ◽  
A. Evtukh ◽  
O. Yilmazoglu ◽  
H. Hartnagel ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Emission ◽  
Wide Band ◽  
Electron Field Emission ◽  
Wide Band Gap ◽  
Electron Field ◽  
Wide Band Gap Semiconductors

Wide Band Gap Electronic Devices

1995 ◽  
pp. 453-461
Author(s):  
V. E. Chelnokov ◽  
K. V. Vassilevski ◽  
V. A. Dmitriev
Keyword(s):  
Band Gap ◽  
Electronic Devices ◽  
Wide Band ◽  
Wide Band Gap

HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS

1995 ◽  
Vol 06 (01) ◽  
pp. 211-236 ◽  
Author(s):  
R.J. TREW ◽  
M.W. SHIN
Keyword(s):  
High Temperature ◽  
Band Gap ◽  
Microwave Power ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Superior Performance ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.

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