Laser Micromachining of Thin-Film Polyimide Microelectrode Arrays: Alternative Processes to Photolithography

Author(s):  
Hsiang-Lan Yeh ◽  
Jonathan V. Garich ◽  
Ian R. Akamine ◽  
Jennifer M. Blain-Christen ◽  
Seth A. Hara

Abstract Thin-film microelectrode arrays have a wide variety of applications in research and medical devices. Conventionally, these arrays are fabricated through the use of photolithography, which can be problematic for innovative medical device fabrication due to long process times, inflexibility to design changes, and the reliance on potentially harmful chemicals. Here, we present the use of laser micromachining as an alternative to photolithography processes to fabricate thin-film polyimide microelectrode arrays. This fabrication method lends itself to an iterative design process as it can reduce fabrication steps and is attractive for medical devices since it can be used without harmful chemicals. Several process parameters were explored and the performance of the fabricated electrodes was compared to similar electrodes that were fabricated with conventional photolithography processes.

Author(s):  
Dongchen Zhu ◽  
Grant A. Cathcart ◽  
Satoshi Ihida ◽  
Hiroshi Toshiyoshi ◽  
Agnès Tixier-Mita ◽  
...  

2009 ◽  
Vol 48 (3) ◽  
pp. 03B020 ◽  
Author(s):  
Ki-Cheol Cheon ◽  
Juhyun Woo ◽  
Deuk-Soo Jung ◽  
Mungi Park ◽  
Hwan Kim ◽  
...  

2018 ◽  
Vol 20 (8) ◽  
pp. 1887-1898 ◽  
Author(s):  
Ji Hoon Kim ◽  
Marcus Cook ◽  
Sang Hyun Park ◽  
Sun Ju Moon ◽  
Jeong F. Kim ◽  
...  

A compact and scalable membrane fabrication method proposes an environmentally friendly process intensification in terms of efficiently reduced production time, chemical consumption, and wastewater generation, resulting in a robust membrane.


1992 ◽  
Vol 284 ◽  
Author(s):  
S. S. He ◽  
D. J. Stephens ◽  
G. Lucovsky ◽  
R. W. Hamaker

ABSTRACTWe describe: i) nitride-layer optimization; ii) device fabrication: and iii) electrical properties of a-Si:H thin film transistors, TFTs, that integrate oxide/nitride dielectrics into an inverted, staggered gate structure. We have systematically changed the concentrations of Si-Si, Si-H and Si-NH bonding groups within the deposited nitride layers by varying the source gas flow ratio, R = NH3/SiH4 from 2.5 to 12.5. The electrical characteristics of the TFTs improve significantly as the gas phase ratio R is increased from 2.5 to approximately 10, and then decrease as R is further increased. The performance of the TFTs peaks for a source gas ratio of -10, where the channel mobility is ∼1.4 cm2/V-s, the threshold voltage is 2.3 V; and the Ion to Ioff current ratio is > 105.These increases in performance can only realized in devices in which the back of the Si channel region is passivated with an oxy-nitride interfacial region.


2007 ◽  
Vol 161 (1) ◽  
pp. 118-125 ◽  
Author(s):  
Katiuska Molina-Luna ◽  
Manuel M. Buitrago ◽  
Benjamin Hertler ◽  
Maximilian Schubring ◽  
Florent Haiss ◽  
...  

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.


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