Design and Optimization of Thermal Selective Emitters for High-Efficiency Thermophotovoltaic (TPV) Power Generation

2015 ◽  
Author(s):  
Anil Yuksel ◽  
Alex Heltzel ◽  
John R. Howell
Keyword(s):  
Band Gap ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Narrow Band ◽  
Low Noise ◽  
Energy Band Gap ◽  
Design And Optimization ◽  
Thermal Emitter ◽  
Selective Emitters ◽  
Sharp Cutoff

Thermophotovoltaic (TPV) devices are popular energy converters due to providing low noise, low thermal-mechanical stresses and portability. The conversion efficiency of TPVs is still low due to mistuned spectral properties between thermal selective emitters and the TPV cell. Using thermal selective emitters that are well-matched to the TPV cell spectrum enhances the conversion efficiency of TPVs. Several thermal selective emitters, composed of 1-D complex multilayer structures with rectangular gratings, have been proposed. Cost, fabrication and stability factors have been major problems for their application on TPV modules. In this paper, a 1-D tungsten thermal emitter is optimized which exhibits close to blackbody emittance near the band-gap of a GaInAsSb TPV cell and sharp cutoff for longer wavelengths. The emitter is at 1200K, and is designed and optimized by modeling triangular grooves to excite localized groove modes which are well-matched to the GaInAsSb TPV cell external quantum efficiency (EQE) for high efficiency energy conversion. We suggest that a quasi-monochromatic, narrow-band and coherent emitter at a frequency near the energy band-gap of the converter is an ideal source to achieve high conversion efficiency.

scholarly journals Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells

2012 ◽  
Author(s):  
Salah M. Bedair ◽  
◽  
John R. Hauser ◽  
Nadia Elmasry ◽  
Peter C. Colter ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Efficiency ◽  
Narrow Band ◽  
High Efficiency Solar Cells

scholarly journals Antibacterial Narrow-Band-Gap Conjugated Oligoelectrolytes with High Photothermal Conversion Efficiency

2017 ◽  
Vol 56 (50) ◽  
pp. 16063-16066 ◽  
Author(s):  
Bing Wang ◽  
Guangxue Feng ◽  
Martin Seifrid ◽  
Ming Wang ◽  
Bin Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Conversion Efficiency ◽  
Narrow Band ◽  
Photothermal Conversion

Selective Emitters Design and Optimization for Energy Harvesting Using Rectennas

2016 ◽  
Author(s):  
Mehdi Zeyghami ◽  
Philip D. Myers ◽  
D. Yogi Goswami ◽  
Elias Stefanakos
Keyword(s):  
High Efficiency ◽  
Characteristic Length ◽  
High Energy ◽  
Algorithm Optimization ◽  
Selective Emitter ◽  
Design And Optimization ◽  
Attractive Option ◽  
Conversion Efficiencies ◽  
Thermal Sources ◽  
Selective Emitters

Recently, rectennas have drawn attention as an attractive option to harvest radiative thermal energy from the sun and terrestrial thermal sources. In order to achieve the potential high energy conversion efficiencies by this technology, matching conditions between the incident electromagnetic wavelength and the rectenna characteristic length must be satisfied. Therefore, a selective emitter is a key element in high efficiency rectennas. Photonic structures were designed for selective emission using the transfer matrix method and genetic algorithm optimization. Two types of emitters were developed using aluminum as the supporting substrate. This paper presents narrowband selective emitters with a peak emissivity at 9.45 μm made of alternating layers of Al2O3 and SiO2 on a substrate, and broadband selective emitters made of alternating layers of Al2O3 and SiC on a substrate with a high emissivity band between 9.5 μm and 10.5 μm.

scholarly journals Antibacterial Narrow-Band-Gap Conjugated Oligoelectrolytes with High Photothermal Conversion Efficiency

2017 ◽  
Vol 129 (50) ◽  
pp. 16279-16282 ◽  
Author(s):  
Bing Wang ◽  
Guangxue Feng ◽  
Martin Seifrid ◽  
Ming Wang ◽  
Bin Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Conversion Efficiency ◽  
Narrow Band ◽  
Photothermal Conversion

Simple Structure and High Efficiency Phosphorescent OLEDs Using Narrow Band-gap Bipolar Host Material

2012 ◽  
Vol 1435 ◽  
Author(s):  
Young Hoon Son ◽  
Jang Hyuk Kwon
Keyword(s):  
Band Gap ◽  
External Quantum Efficiency ◽  
Simple Structure ◽  
High Efficiency ◽  
Narrow Band ◽  
Triplet Energy ◽  
Energy Hole ◽  
Host Materials ◽  
Hole Transporting ◽  
Hole Transporting Material

ABSTRACTWe report high-efficiency phosphorescent blue OLEDs with an organic three stacked structure. Using a high-triplet-energy-hole transporting material of TAPC and a high-triplet-energy-electron transporting material of TmPyPB, the organic three stacked structure has been realized with three new narrow band-gap blue host materials. These host materials have bipolar characteristics and high triplet energy of >2.8 eV. Very low onset voltages of 2.8~3.0 V and driving voltages of 4.2~4.6 V to obtain a brightness of 1000 cd/m2 are achieved in this three stacked device configuration. Maximum external quantum efficiency above 20% is reported.

scholarly journals High-Efficiency Photochemical Water Splitting of CdZnS/CdZnSe Nanostructures

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Chen-I Wang ◽  
Zusing Yang ◽  
Arun Prakash Periasamy ◽  
Huan-Tsung Chang
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Water Splitting ◽  
Chemical Bath Deposition ◽  
Conversion Efficiency ◽  
Light Absorption ◽  
High Efficiency ◽  
Saturated Calomel Electrode ◽  
Photocurrent Density ◽  
Solar Water Splitting

We have prepared and employed TiO2/CdZnS/CdZnSe electrodes for photochemical water splitting. The TiO2/CdZnS/CdZnSe electrodes consisting of sheet-like CdZnS/CdZnSe nanostructures (8–10 μm in length and 5–8 nm in width) were prepared through chemical bath deposition on TiO2 substrates. The TiO2/CdZnS/CdZnSe electrodes have light absorption over the wavelength 400–700 nm and a band gap of 1.87 eV. Upon one sun illumination of 100 mW cm−2, the TiO2/CdZnS/CdZnSe electrodes provide a significant photocurrent density of 9.7 mA cm−2 at −0.9 V versus a saturated calomel electrode (SCE). Incident photon-to-current conversion efficiency (IPCE) spectrum of the electrodes displays a maximum IPCE value of 80% at 500 nm. Moreover, the TiO2/CdZnS/CdZnSe electrodes prepared from three different batches provide a remarkable photon-to-hydrogen efficiency of 7.3 ± 0.1% (the rate of the photocatalytically produced H2 by water splitting is about 172.8 mmol·h−1·g−1), which is the most efficient quantum-dots-based photocatalysts used in solar water splitting.

scholarly journals SCAPS SIMULATION OF ZnO/In2S3/Cu2Sn3S7/Mo SOLAR CELL

2018 ◽  
Vol 54 (1A) ◽  
pp. 183
Author(s):  
Phung Dinh Hoat
Keyword(s):  
Solar Cell ◽  
Absorption Coefficient ◽  
Band Gap ◽  
Carrier Concentration ◽  
Conversion Efficiency ◽  
Energy Band ◽  
Input Data ◽  
Energy Band Gap ◽  
Main Input

Operation of ZnO/In2S3/Cu2Sn3S7/Mo solar cell was calculated using the SCAPS software. Main input data were energy band gap Eg, absorption coefficient α, thickness d, mobility μ and carrier concentration n of the ZnO, In2S3 and Cu2Sn3S7 films obtained from experiments. In all calculation processes, parameters of the ZnO (Eg = 3.3 eV, d = 0.2 μm, μn = 100 cm2/(Vs)) and In2S3 (Eg = 2.96 eV, d = 0.1 μm, μn = 50 cm2/(Vs)) films were kept constant. Effects of thickness d and carrier concentration np of the Cu2Sn3S7 (αmax = 4.2×104 cm-1, Eg = 1.46 eV) film on Voc, Jsc, Vm, Jm, FF and η of the cell were investigated in the ranges of d = 0.3 – 3.5 μm and np = 1017 – 1020 cm-3. Under the standard AM 1.5G illumination at 300 K, the ZnO/In2S3/Cu2Sn3S7/Mo solar cell having Rs = 10 Ω.cm2 and Rsh = 1×106 Ω.cm2 using Cu2Sn3S7 film having d = 2 μm, αmax = 4.2×104 cm-1, Eg = 1.46 eV, μp = 15 cm2/(Vs) and np = 1020 cm-3 has the highest conversion efficiency ηmax = 18.0 % with Voc = 0.98 V, Jsc = 31.2 mA/cm2, Vm = 0.62 V, Jm = 28.8 mA/cm2 and FF = 58.8 %.

Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs

2009 ◽  
Vol 1230 ◽  
Author(s):  
Eric Tea ◽  
Frederic Aniel
Keyword(s):  
Monte Carlo ◽  
Band Gap ◽  
Carrier Concentration ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Narrow Band ◽  
Monte Carlo Model ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Auger Effect

AbstractThe Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.

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